Electrical Properties of Donor and Acceptor Doped Gd2Ti2O7

1994 ◽  
Vol 369 ◽  
Author(s):  
Igor Kosacki ◽  
Harry L. Tuller
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conductivity Measurements ◽  
Donor And Acceptor ◽  
Mn Doped

The results of electrical conductivity measurements on Nb, W, and Mn-doped Gd2Ti2O7 are presented. A correlation between electrical conductivity, the oxygen partial pressure and type of dopants has been obtained. The source of the different PO2 dependence for Mn-doped material is discussed.

THE ELECTRICAL PROPERTIES OF ALUMINA AT HIGH TEMPERATURES

1966 ◽  
Vol 44 (8) ◽  
pp. 1685-1698 ◽  
Author(s):  
T. Matsumura
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Single Crystal ◽  
Transport Number ◽  
Ionic Transport ◽  
Mixed Conductor ◽  
Polycrystalline Alumina ◽  
Ionic Transport Number

The ionic transport number and the d-c. electrical conductivity of single-crystal and polycrystalline alumina have been studied between 1 000 °K and 1 750 °K at an oxygen partial pressure of 0.2 atm. The ionic transport number was determined by the galvanic-cell e.m.f. measurements; the electrical conductivity was measured by the three-terminal method.It was found that alumina is a mixed conductor, being predominantly an ionic conductor at temperatures below 1 100 °K and predominantly electronic at temperatures higher than 1 600 °K. The activation energies found for the electrical conductivity of the single-crystal and polycrystalline specimens are 0.8 eV and 2.4 eV respectively in the ionic range and 3.0 eV and 3.7 eV in the electronic range.

Electrical Conductivity of Piezoelectric Strontium Bismuth Titanate Under Controlled Oxygen Partial Pressure

1999 ◽  
Vol 604 ◽  
Author(s):  
C. Voisard ◽  
P. Duran Martin ◽  
D. Damjanovic ◽  
N. Settier
Keyword(s):  
Electrical Conductivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Elevated Temperatures ◽  
Vacancy Concentration ◽  
Common Mechanism ◽  
Oxygen Vacancy Concentration ◽  
Reducing Conditions ◽  
Ionic Transport Number ◽  
Mn Doped

AbstractHysteresis free and linear piezoelectric behavior of SrBi4Ti4O15 (SrBIT) is very promising for precise sensors/actuators devices. Despite a quite low longitudinal piezoelectric coefficient (around 15 pC/N), its elevated ferroelectric phase transition temperature (540°C) allows its use above 300°C. Electrical conductivity at such temperatures should be kept as low as possible in order to avoid loss of piezoelectric properties or charge drifts. Under reducing conditions, however, the electrical conductivity may change considerably. The electrical conductivity of SrBi4Ti4O15 (SrBIT) has been measured under controlled oxygen partial pressure at elevated temperatures (700-900°C) from 1 atm down to 10−15atm. From 1 atm down to 10−15 atm pO2, above 700°C, the conductivity of SrBIT exhibits a -1/4 slope in log-log scale indicating n-type conductivity and an impurity controlled oxygen vacancy concentration. A conductivity minimum is observed around 0.2 atm for undoped SrBIT at 800°C. Acceptor doping (Mn) raises the minimum and flattens the conductivity curve with slope around -1/10 at 700°C, and -1/6 at 900°C. Ionic conductivity and defect ionization are discussed to account for this. Preliminary results indicate the possibility of a large, pO2 independent, region, down to 10−15atm pO2. The ionic transport number was found to be 0.42 at 800°C for undoped SrBIT and 0.75 for Mn doped SrBIT. The activation energies of undoped (1.35 eV) and Mn doped (1.44 eV) samples are close to each other as expected for a common mechanism

Characterization of YBa2Cu4O8 high temperature electrical properties and thermodynamic stability

1991 ◽  
Vol 6 (10) ◽  
pp. 2054-2058 ◽  
Author(s):  
B-S. Hong ◽  
T.O. Mason
Keyword(s):  
High Temperature ◽  
Electrical Property ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Range ◽  
Stability Range

Via in situ electrical property measurements (conductivity, Seebeck coefficient) over the temperature range 500–800 °C and oxygen partial pressure range 10−4-1 atm, the equilibrium transport properties and stability range of YBa2Cu4O8 were determined. YBa2Cu4O8 behaves like the intrinsically mixed-valent compound, magnetite (Fe3O4), with small variations in electrical properties with changes in oxygen partial pressure. The decomposition boundary to YBa2Cu3O6+y (or YBa2Cu3.5O7.5±z) and CuO occurs at log(po2, atm) = −1.24 × 104/T(K) + 11.01(773 ⋚ T(K) ⋚ 1073).

Effect of oxygen partial pressure on nonlinear optical and electrical properties of BNT–KNNG composite thin films

2020 ◽  
Vol 31 (4) ◽  
pp. 2986-2996
Author(s):  
Srinivas Pattipaka ◽  
J. Pundareekam Goud ◽  
Gyan Prakash Bharti ◽  
K. C. James Raju ◽  
Alika Khare ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Nonlinear Optical ◽  
Optical And Electrical Properties ◽  
Composite Thin Films ◽  
Effect Of Oxygen

Defect chemistry of donor-doped BaTiO3 with BaO-excess for reduction resistant PTCR thermistor applications – redox-behaviour

2020 ◽  
Vol 22 (15) ◽  
pp. 8219-8232
Author(s):  
Christian Pithan ◽  
Hayato Katsu ◽  
Rainer Waser
Keyword(s):  
Electrical Conductivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Defect Chemistry ◽  
Redox Behaviour ◽  
Ptcr Effect

The electrical conductivity of donor-doped BaTiO3 thermistor ceramics with excessive BaO revealing a reduction-persistent PTCR effect has been carefully examined depending on materials’ composition and oxygen partial pressure at moderate temperatures between 973 and 1273 K.

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