Low Deep Impurity InxGa1-xP Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Electron Trap ◽  
Deep Impurity ◽  
Metalorganic Chemical

AbstractInxGai-xP (x=0.49) layers lattice-matched to GaAs have been grown by metalorganic chemical vapor deposition (MOCVD). We did not observe any deep levels in the temperature range of 30-380K by deep level transient spectroscopy (DLTS) in undoped In0.49Ga0.51P layers which have a background concentration of 3.1×1015 cm−3. The deep levels, if they exist, have a concentration of less than 5×1011 cm−3, which is the lowest deep level concentration found so far in InxGa1-xP materials. Moreover, lattice-mismatched InxGa1-xP/GaAs heterojunctions were deliberately grown by varying the In-composition ranging from 0.43 to 0.57. No deep levels were created in 1-μm-thick InxGa1-xP layers due to lattice mismatch when 0.469 < x < 0.532. However, we have observed a shallow electron trap at EC - 60 meV in InxGa1-xP layers with x < 469, and a deep electron trap located at Ec - 0.85 eV in the samples with x > 0.532. We suggest that the lattice-mismatch-induced-defects in InxGa1-xP are either electrically inactive or resided outside the bandgap when In content ranging from 0.469 to 0.532.

Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Se Doping ◽  
Transient Spectroscopy ◽  
Low Selenium ◽  
Metalorganic Chemical

ABSTRACTWe have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 468 ◽  
Author(s):  
Jing-Hong Li ◽  
Olga M. Kryliouk ◽  
Paul H. Holloway ◽  
Timothy J. Anderson ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Metalorganic Chemical

ABSTRACTMicrostructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
M. Ahoujja ◽  
S. Elhamri ◽  
R. Berney ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

ABSTRACTElectrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition

2012 ◽  
Vol 100 (8) ◽  
pp. 082103 ◽  
Author(s):  
T. A. Henry ◽  
A. Armstrong ◽  
K. M. Kelchner ◽  
S. Nakamura ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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