Surface Modification of ZnxCd1-x Te Due to Low Energy Ion Sputtering

1995 ◽  
Vol 386 ◽  
Author(s):  
S. Vijayalakshmi ◽  
K.-T. Chen ◽  
M. A. George ◽  
A. Burger ◽  
W. E. Collins
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Infrared Detectors ◽  
Lattice Mismatch ◽  
Low Energy ◽  
Ion Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

ABSTRACTZnxCd1-xTe is a widely used substrate for the epitaxial growth of HgCdTe, which is used in infrared detectors. Results of the effect of sputtering of ZnxCd1-xTe single crystals with low energy Ar beam are reported in this paper. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) techniques were used to measure the concentration of Zn in these crystals. Selective sputtering of Zn atoms has been observed from freshly cleaved crystals using XPS studies. Sputtering is a common method of cleaning ZnxCd1-xTe crystals in their device preparation and our studies show that this method of cleaning alters the surface which may introduce lattice mismatch on the surface. Surface morphology before and after cleaving the crystals is studied using Atomic Force Microscopy (AFM).

Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

Atomic force microscopy and X-ray photoelectron spectroscopy characterization of low-energy ion sputtered mica

2007 ◽  
Vol 601 (13) ◽  
pp. 2735-2739 ◽  
Author(s):  
Renato Buzio ◽  
Andrea Toma ◽  
Andrea Chincarini ◽  
Francesco Buatier de Mongeot ◽  
Corrado Boragno ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Investigation of Ti/CuO interface by X-ray photoelectron spectroscopy and atomic force microscopy

2018 ◽  
Vol 51 (2) ◽  
pp. 246-253
Author(s):  
Dev Raj Chopra ◽  
Justin Seth Pearson ◽  
Darius Durant ◽  
Ritesh Bhakta ◽  
Anil R. Chourasia
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

2003 ◽  
Vol 82 (12) ◽  
pp. 1830-1832 ◽  
Author(s):  
H. Dumont ◽  
D. Rutzinger ◽  
C. Vincent ◽  
J. Dazord ◽  
Y. Monteil ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Surface Segregation ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Polystyrene as Graphene Film and 3D Graphene Sponge Precursor

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 101 ◽  
Author(s):  
Alejandra Rendón-Patiño ◽  
Jinan Niu ◽  
Antonio Doménech-Carbó ◽  
Hermenegildo García ◽  
Ana Primo
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Graphene Film ◽  
Visible Absorption ◽  
X Ray ◽  
3D Graphene ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Sponge

Polystyrene as a thin film on arbitrary substrates or pellets form defective graphene/graphitic films or powders that can be dispersed in water and organic solvents. The materials were characterized by visible absorption, Raman and X-ray photoelectron spectroscopy, electron and atomic force microscopy, and electrochemistry. Raman spectra of these materials showed the presence of the expected 2D, G, and D peaks at 2750, 1590, and 1350 cm−1, respectively. The relative intensity of the G versus the D peak was taken as a quantitative indicator of the density of defects in the G layer.

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