Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

scholarly journals A Review on Common Methods for Characterizing Graphene Oxide (GO)

2019 ◽  
pp. 1-8
Author(s):  
Md. Shafiul Islam
Keyword(s):  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
The Past ◽  
Atomic Force ◽  
Scientific World ◽  
Uv Visible

Graphene oxide, two-dimensional material with the thickness of 1.1±0.2 nm, has gained attention to a greater extent in the field of science for its radically distinctive properties: physical, chemical, optical as well as electrical etc. Graphene oxide (monolayer sheet) has been synthesized by oxidizing graphite (millions of layer) to graphite oxide (multilayers) which has been converted into graphene oxide via exfoliation followed by sonication and centrifugation - a method mentioned as Modified Hummer Method. I focus on the chemical structure of graphene oxide. However, I discuss the different analytical methods such as UV-Visible spectroscopy, Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) as well as X-ray Diffraction pattern for characterizing the graphene oxide. Furthermore, this review covers the analytical evaluation of graphene oxide and discuss the past, present and future of graphene oxide in the scientific world.

scholarly journals Micro Scalable Graphene Oxide Productions Using Controlled Parameters in Bench Reactor

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1975
Author(s):  
Carolina S. Andrade ◽  
Anna Paula S. Godoy ◽  
Marcos Antonio Gimenes Benega ◽  
Ricardo J. E. Andrade ◽  
Rafael Cardoso Andrade ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Scale Up ◽  
Physicochemical Characteristics ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Process Reproducibility

The detailed study of graphene oxide (GO) synthesis by changing the graphite/oxidizing reagents mass ratios (mG/mROxi), provided GO nanosheets production with good yield, structural quality, and process savings. Three initial samples containing different amounts of graphite (3.0 g, 4.5 g, and 6.0 g) were produced using a bench reactor under strictly controlled conditions to guarantee the process reproducibility. The produced samples were analyzed by Raman spectroscopy, atomic force microscopy (AFM), x-ray diffraction (XDR), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR) and thermogravimetry (TGA) techniques. The results showed that the major GO product comprised of nanosheets containing between 1–5 layers, with lateral size up to 1.8 µm with high structural quality. Therefore, it was possible to produce different batches of graphene oxide with desirable physicochemical characteristics, keeping the amount of oxidizing reagent unchanged. The use of different proportions (mG/mROxi) is an important strategy that provides to produce GO nanostructures with high structural quality and scale-up, which can be well adapted in medium-sized bench reactor.

Study on the Energy Structure of Amorphous Antireflection Er2O3 Films on Si(001) Substrates

2010 ◽  
Vol 663-665 ◽  
pp. 612-615
Author(s):  
Yan Yan Zhu ◽  
Ze Bo Fang ◽  
Ting Ji ◽  
Yong Sheng Liu
Keyword(s):  
Atomic Force Microscopy ◽  
Electronic Structure ◽  
Photoelectron Spectroscopy ◽  
Energy Gap ◽  
Antireflection Coating ◽  
Energy Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron technique. X-ray photoelectron spectroscopy, x-ray diffraction and atomic force microscopy show the Er2O3 films obtained are stoichiometric, amorphous, and uniform. The electronic structure is studied which shows a large energy gap value of the Er2O3 film, indicating Er2O3 film could be a promising antireflection coating for solar cells.

Surface Modification of ZnxCd1-x Te Due to Low Energy Ion Sputtering

1995 ◽  
Vol 386 ◽  
Author(s):  
S. Vijayalakshmi ◽  
K.-T. Chen ◽  
M. A. George ◽  
A. Burger ◽  
W. E. Collins
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Infrared Detectors ◽  
Lattice Mismatch ◽  
Low Energy ◽  
Ion Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

ABSTRACTZnxCd1-xTe is a widely used substrate for the epitaxial growth of HgCdTe, which is used in infrared detectors. Results of the effect of sputtering of ZnxCd1-xTe single crystals with low energy Ar beam are reported in this paper. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) techniques were used to measure the concentration of Zn in these crystals. Selective sputtering of Zn atoms has been observed from freshly cleaved crystals using XPS studies. Sputtering is a common method of cleaning ZnxCd1-xTe crystals in their device preparation and our studies show that this method of cleaning alters the surface which may introduce lattice mismatch on the surface. Surface morphology before and after cleaving the crystals is studied using Atomic Force Microscopy (AFM).

Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)

2007 ◽  
Vol 556-557 ◽  
pp. 235-238
Author(s):  
D. Kurt Gaskill ◽  
Michael A. Mastro ◽  
Kok Keong Lew ◽  
Brenda L. VanMil ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Comparative Investigation ◽  
Radius Of Curvature ◽  
Cross Polarization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Curvature Measurements

A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps before and after final chemical-mechanical polish. After final polish, the wafers were also investigated with atomic force microscopy, radius of curvature measurements and cross-polarization (x-pol) mapping. It was found that there was largely a lack of correlation between the XRD and x-pol maps, which strongly suggests that x-pol is insensitive to crystalline imperfections to which XRD is sensitive.

Grain Boundary Diffusion in NiFe/Ag Bilayer Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
M. Gall ◽  
J.G. Pellerin ◽  
P.S. Ho ◽  
K.R. Coffey ◽  
J.K. Howard
Keyword(s):  
Grain Boundary ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

ABSTRACTX-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Ag through 250 Å thick Ni80Fe20 (permalloy) films in the temperature range of 375 to 475°C. Grain boundary diffusivities were determined by modeling the accumulation of Ag on Ni80Fe20 surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Ag through Ni80Fe20 is characterized by a diffusion coefficient prefactor, D0,gb, of 0.9 cm2/sec and an activation energy, Ea,gb, of 2.2 eV. The Ni80Fe20 film microstructure has been investigated before and after annealing by atomic force microscopy and x-ray diffraction. The microstructure of Ni80Fe20 deposited on Ag underlayers remained relatively unchanged upon annealing.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

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