In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

1995 ◽  
Vol 388 ◽  
Author(s):  
Vladimir V. Pankov ◽  
Nikolai E. Levchuk ◽  
Anatoly P. Dostanko

AbstractTwo types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

Author(s):  
Shang Hsien Rou

New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Special TEM sample preparation procedures have been developed, which will be reported elsewhere.The as-deposited pyrochlore thin film is near epitaxial and is oriented with both (100) and (111) parallel to the (100) of the MgO substrate. Figure 1(a) shows the selected area diffraction pattern (SADP) of the pyrochlore thin film taken parallel to the [100] zone axis of the substrate.


Nano Letters ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 8365-8371 ◽  
Author(s):  
Khalil El hajraoui ◽  
Eric Robin ◽  
Clemens Zeiner ◽  
Alois Lugstein ◽  
Stéphanie Kodjikian ◽  
...  

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