Microstructure of polycrystalline near epitaxial (100) and (111) pyrochlore on A (100) MgO Substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 1062-1063
Author(s):  
Shang Hsien Rou
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Physical Phenomena ◽  
Mgo Substrate

New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Special TEM sample preparation procedures have been developed, which will be reported elsewhere.The as-deposited pyrochlore thin film is near epitaxial and is oriented with both (100) and (111) parallel to the (100) of the MgO substrate. Figure 1(a) shows the selected area diffraction pattern (SADP) of the pyrochlore thin film taken parallel to the [100] zone axis of the substrate.

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

2007 ◽  
Vol 336-338 ◽  
pp. 1788-1790
Author(s):  
Yu Ju Chen ◽  
Wen Cheng J. Wei
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Crystal Growth Process ◽  
Transmission Electron ◽  
Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

Characterization of the inverted tetrahedral twin particles in the heteroepitaxial KNbO3 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 466-467
Author(s):  
Shang H. Rou ◽  
John J. Hren ◽  
Philip D. Hren ◽  
Thomas M. Graettingcr ◽  
Michael S. Ameen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Diffraction Pattern ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Epitaxial Relationship ◽  
Target Holder ◽  
Transmission Electron ◽  
The Matrix

Perovskite potassium niobate (KNbO3) possesses good electrooptic properties for modulated channel waveguide applications, Epitaxial KNbO3 thin films were deposited onto (100) MgO substrates using an ion beam sputtering technique equipped with a novel computer-controlled rotating target holder , Conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) were employed to perform defect structure and microstructure analysis. Special TEM sample preparation procedures have been developed, which will be reported elsewhere, Tetrahedral twin particles (TTP's) were observed in the epitaxial KNbO3 thin films. Since, the orientation difference between the TTP's and the matrix may affect the polarization switching properties, it is essential to understand their origin and eliminate them if possible.A selected area diffraction pattern of a KNbO3 thin film taken along the substrate (012) (figure 1) reveals twin and double diffraction spots. The mirror planes are determined to be of the {211} family. Figure 2(a) shows the electron diffraction pattern taken along the substrate (100). Twin spots coincide with some of the matrix spots indicating that the twin also maintains an epitaxial relationship with the MgO substrate. The orientation relationship between the twins and the matrix is [221]twin//[100]matrix.

Size Effect in Nix(MgO)100-X Nanocomposites

2010 ◽  
Vol 168-169 ◽  
pp. 361-364 ◽  
Author(s):  
A.A. Grebennikov ◽  
O.V. Stognei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Curie Temperature ◽  
Size Effect ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Nanostructured Composite ◽  
Transmission Electron ◽  
Beam Sputtering

The possibility of obtaining a nanostructured composite in the Ni-Mg-O system by ion-beam sputtering has been investigated. The structural, magnetic and magnetoresistive properties of obtained samples have been investigated in a wide concentration range. The presence of the nanostructure in the obtained samples with Ni nanogranules (2-3 nm) has been confirmed by transmission electron microscopy. There is no observation of any magnetic or magnetoresistive properties at room temperature in the Nix(MgO)100-x composites. These properties were observed at 77 K. The obtained data mean that Curie temperature of the Ni nanogranules is lower then 298 K. This is due to small size of nickel granules and low value of exchange interaction energy in nickel.

In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

1995 ◽  
Vol 388 ◽  
Author(s):  
Vladimir V. Pankov ◽  
Nikolai E. Levchuk ◽  
Anatoly P. Dostanko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Transmission Electron Microscopy Analysis ◽  
Ion Beam Etching ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Electron Microscopy Analysis

AbstractTwo types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

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