Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystallinity in LPCVD Process

ABSTRACTDeposition of a thin film in the LPCVD process has been simulated by a Monte–Carlo method based on a simple model taking into account the desorption, the surface reaction, and the surface migration of the film precursor. The model has been used for the simulation of the film profile obtained in a narrow and deep trench and of the film crystallinity on a flat surface. The simulation results describe successfully those obtained by experiments under various process conditions.

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Kinetic Monte Carlo Simulation of Diamond Film Growth with the Inclusion of Surface Migration

MRS Proceedings ◽

10.1557/proc-527-383 ◽

1998 ◽

Vol 527 ◽

Cited By ~ 3

Author(s):

Armando Netto ◽

Michael Frenklach

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Film Growth ◽

Kinetic Monte Carlo ◽

Diamond Films ◽

State Theory ◽

Diamond Surface ◽

Diamond Growth ◽

Gaseous Species ◽

Surface Migration

ABSTRACTDiamond films are of interest in many practical applications but the technology of producing high-quality, low-cost diamond is still lacking. To reach this goal, it is necessary to understand the mechanism underlying diamond deposition. Most reaction models advanced thus far do not consider surface diffusion, but recent theoretical results, founded on quantum-mechanical calculations and localized kinetic analysis, highlight the critical role that surface migration may play in growth of diamond films. In this paper we report a three-dimensional time-dependent Monte Carlo simulations of diamond growth which consider adsorption, desorption, lattice incorporation, and surface migration. The reaction mechanism includes seven gas-surface, four surface migration, and two surface-only reaction steps. The reaction probabilities are founded on the results of quantum-chemical and transition-state-theory calculations. The kinetic Monte Carlo simulations show that, starting with an ideal {100}-(2×1) reconstructed diamond surface, the model is able to produce a continuous film growth. The smoothness of the growing film and the developing morphology are shown to be influenced by rate parameter values and by deposition conditions such as temperature and gaseous species concentrations.

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Hybrid asynchronous algorithm for parallel kinetic Monte Carlo simulations of thin film growth

Journal of Computational Physics ◽

10.1016/j.jcp.2005.07.005 ◽

2006 ◽

Vol 212 (1) ◽

pp. 305-317 ◽

Cited By ~ 20

Author(s):

Yunsic Shim ◽

Jacques G. Amar

Keyword(s):

Thin Film ◽

Monte Carlo ◽

Monte Carlo Simulations ◽

Film Growth ◽

Kinetic Monte Carlo ◽

Thin Film Growth ◽

Asynchronous Algorithm ◽

Kinetic Monte Carlo Simulations

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Monte Carlo simulation of thin film growth on Si surfaces

Progress in Surface Science ◽

10.1016/0079-6816(93)90007-i ◽

1993 ◽

Vol 44 (1) ◽

pp. 67-99 ◽

Cited By ~ 30

Author(s):

Takaaki Kawamura

Keyword(s):

Thin Film ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Film Growth ◽

Thin Film Growth

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Photoinduced Selective Deposition of Aluminium Thin Film Using Dimethylaluminum Hydride

MRS Proceedings ◽

10.1557/proc-236-85 ◽

1991 ◽

Vol 236 ◽

Cited By ~ 3

Author(s):

Mitsugu Hanabusa ◽

Hideki Ouchi ◽

Kenji Ishida ◽

Masahiro Kawasaki ◽

Satoshi Shogen

Keyword(s):

Thin Film ◽

Photoelectron Spectroscopy ◽

Surface Reaction ◽

Silicon Oxide ◽

Film Growth ◽

X Ray ◽

Etched Silicon ◽

Substrate Surfaces ◽

Deuterium Lamp ◽

Dimethylaluminum Hydride

AbstractAluminum thin film was deposited via a photochemical surface reaction of dimethylaluminum hydride (DMAH) using a deuterium lamp. The period required to initiate the film growth differed with substrate, and making use of this result the film could be grown preferentially on silicon nitride and silicon oxide layers rather than on wet-etched silicon. On the basis of an x-ray photoelectron spectroscopy the observed dependence of photodeposition on substrate surfaces can be attributed to how DMAH is chemisorbed initially.

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