Growth Kinetics and Structure of Ultrathin Copper Films on the W(110) Surface Studied by Leem

1995 ◽  
Vol 399 ◽  
Author(s):  
M.S. Altman ◽  
E.Z. Luo ◽  
W.F. Chung ◽  
B.G. Orr
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Low Energy ◽  
Copper Films ◽  
Desorption Energy ◽  
Growth Morphology ◽  
Island Nucleation ◽  
Step Flow ◽  
Balance Condition ◽  
Low Energy Electron

ABSTRACTCompeting desorption during the epitaxial growth of Cu on the W(110) surface has been studied with low energy electron microscopy (LEEM). Direct imaging of a structural transformation from pseudomorphic (1×1) to relaxed (15×1) periodicity which occurs at a coverage of θCu = 2.13 monolayers is used as a very accurate, local probe of coverage during deposition. The desorption energy E = 3.67 eV and attempt frequency v = 2.15 × 1015 s−1 are determined by examining the balance condition when the incident and desorption fluxes are equal. A step-flow-like growth morphology occurs when the supersaturation is significantly reduced by competing desorption. An island nucleation and coalescence growth morphology results at higher supersaturation.

Quantitative Analysis of the Evolution of Surface Growth Morphology in LEEM

1998 ◽  
Vol 05 (06) ◽  
pp. 1151-1158 ◽  
Author(s):  
J. B. Hannon ◽  
G. L. Kellogg ◽  
M. C. Bartelt ◽  
N. C. Bartelt
Keyword(s):  
Electron Microscopy ◽  
Monte Carlo ◽  
Quantitative Analysis ◽  
Diffusion Equation ◽  
Monte Carlo Simulations ◽  
Low Energy ◽  
Growth Morphology ◽  
Equation Analysis ◽  
Low Energy Electron ◽  
And Diffusion

We describe Monte Carlo simulations and diffusion equation analysis which are useful in deriving kinetic parameters from low energy electron microscopy experiments. An analysis of the etching of the Si(001) surface with molecular oxygen is made, illustrating the power of these techniques.

THE TRANSITION TO STEP FLOW GROWTH ON THE CLEAN AND SURFACTANT COVERED Si(111) SURFACE STUDIED BY IN-SITU LEEM

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4353-4362 ◽  
Author(s):  
W. F. CHUNG ◽  
K. BROMANN ◽  
M. S. ALTMAN
Keyword(s):  
Abrupt Change ◽  
Low Energy ◽  
Clean Surface ◽  
Nucleation Behavior ◽  
Island Nucleation ◽  
Step Flow ◽  
Terrace Width ◽  
Low Energy Electron ◽  
Step Flow Growth

The transition to step flow growth on the clean Si(111) (7×7), Si(111)-In [Formula: see text] and Si(111)-Sb (7×7) surfaces have been investigated using low energy electron microscopy (LEEM). The critical terrace width for step flow on the clean surface displays in Arrhenius behaviour, although with markedly different prefactor and activation energy above and below 750°K. The abrupt change in Arrhenius parameters was revealed by LEEM to correlate with the crossover from homogeneous to heterogeneous island nucleation behavior. The dependence of the critical terrace width upon step orientation is attributed to anisotropic step attachment kinetics. Sb and In surfactants were found to suppress and enhance step flow, respectively, in accordance with expectations. The preparations of Si(111)-Sb (7×7) and Si(111)-In [Formula: see text] surfaces that are morphologically suitable for step flow growth are also described.

Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates

MRS Advances ◽  
2016 ◽  
Vol 2 (1) ◽  
pp. 51-56 ◽  
Author(s):  
Fuminori Mitsuhashi ◽  
Masaya Okada ◽  
Yasunori Tateno ◽  
Takashi Nakabayashi ◽  
Masaki Ueno ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
High Frequency ◽  
Low Energy ◽  
Raman Mapping ◽  
Annealing Temperatures ◽  
Novel Method ◽  
Low Energy Electron ◽  
Sic Film ◽  
Sic Films

ABSTRACTA novel method to fabricate uniform epitaxial graphene on C-face SiC substrates was investigated. Graphene was grown on the C-face 6H-SiC substrates with a sputtered SiC film by annealing temperatures ranging from 1400 to 1900 °C under an Ar ambient. The fractional area of the graphene having the layer number of two was about 95% in a 75×75 μm square by a Raman mapping and a low energy electron microscopy. Graphene on the C-face SiC fabricated by this method is quite uniform compared to that made by a conventional method without the sputtered SiC films and is thus suitable for high frequency analog devices.

A New Low Energy Electron Microscope

1998 ◽  
Vol 05 (06) ◽  
pp. 1189-1197 ◽  
Author(s):  
R. M. Tromp ◽  
M. Mankos ◽  
M. C. Reuter ◽  
A. W. Ellis ◽  
M. Copel
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Electron Microscope ◽  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Low Energy ◽  
Energy Electron ◽  
Relaxation Phenomena ◽  
Low Energy Electron

Low energy electron microscopy (LEEM) has developed into one of the premier techniques for in situ studies of surface dynamical processes, such as epitaxial growth, phase transitions, chemisorption and strain relaxation phenomena. Over the last three years we have designed and constructed a new LEEM instrument, aimed at improved resolution, improved diffraction capabilities and greater ease of operation compared to present instruments.

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