Structural Characterization of Reactive Ion Etched Semiconductor Nanostructures Using X-Ray Reciprocal Space Mapping

1995 ◽  
Vol 406 ◽  
Author(s):  
G. Bauer ◽  
A. A. Darhuber ◽  
V. Holy
Keyword(s):  
Quantum Dot ◽  
Reciprocal Lattice ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Lattice Points ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Entire Volume ◽  
X Ray

AbstractWe have studied GaAs/AlAs periodic quantum dot arrays using high resolution x-ray diffraction (reciprocal space mapping) around the (004) and (113) reciprocal lattice points. From the distribution of the diffracted intensities we deduced the average strain status of the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the entire volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate.

Structural Characterization of Reactive Ion Etched Semiconductor Nanostructures Using X-Ray Reciprocal Space Mapping

1995 ◽  
Vol 405 ◽  
Author(s):  
G. Bauer ◽  
A. A. Darhuber ◽  
V. Holy
Keyword(s):  
Quantum Dot ◽  
Reciprocal Lattice ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Lattice Points ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Entire Volume ◽  
X Ray

AbstractWe have studied GaAs/AlAs periodic quantum dot arrays using high resolution x-ray diffraction (reciprocal space mapping) around the (004) and (113) reciprocal lattice points. From the distribution of the diffracted intensities we deduced the average strain status of the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the entire volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate.

Lattice distortion in dry-etched Si/SiGe quantum dot array studied by 2D reciprocal space mapping using synchrotron X-ray diffraction

1997 ◽  
Vol 294 (1-2) ◽  
pp. 300-303 ◽  
Author(s):  
W.-X Ni ◽  
J Birch ◽  
Y.S Tang ◽  
K.B Joelsson ◽  
C Sotomayor-Torres ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Lattice Distortion ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Sige Quantum Dot

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

X-Ray Investigation of Strain Relaxation in Short-Period SimGen Superlattices using Reciprocal Space Mapping

1993 ◽  
Vol 298 ◽  
Author(s):  
P. Hamberger ◽  
E. Koppensteiner ◽  
G. Bauer ◽  
H. Kibbel ◽  
H. Presting ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Reciprocal Lattice ◽  
Reciprocal Space ◽  
Lattice Points ◽  
Reciprocal Space Mapping ◽  
Double Crystal ◽  
X Ray ◽  
Short Period ◽  
Integrated Intensity ◽  
Strained Layer Superlattices

AbstractThe optoelectronic properties of SimGen strained layer superlattices (SLS's) depend strongly on the structural perfection. We used double crystal and triple axis x-ray diffractometry to characterize the structural properties of short period Si9Ge6 SLS's grown on about lμm thick step-graded SiGe alloy buffers. As grown SLS's and samples annealed subsequently at 550°C, 650°C and 780°C for 60 mmn were investigated. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. These data were used as refined input parameters for the dynamical simulation of the integrated intensity along the qll[004] direction. Annealing causes interdiffusion as indicated by the decreasing superlattice (SL)-satellite peak intensities and by the change of the Si/Ge thickness ratio. However, the full width at half maximum of the SL satellite peaks does not change significantly with annealing up to 650°C. The in-plane SL lattice constant in both samples is increased only slighty by annealing (< 9×10−3 Å). Consequently the interface intermixing due to interdiffusion is the main cause for the shift of the luminescence energy to higher values in these annealed samples.

Preparation of epitaxial La1−xSrxMnO3 films on SrTiO3(001) by dipping-pyrolysis process

1997 ◽  
Vol 12 (2) ◽  
pp. 541-545 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
W. Kondo ◽  
S. Mizuta ◽  
T. Kumagai
Keyword(s):  
Heat Treatment ◽  
Single Crystals ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Pyrolysis Process ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Metallic Conduction ◽  
Conduction Behavior

La1−xSrxMnO3 (LSMO) (x = 0−0.3) films were prepared on SrTiO3(001) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were obtained by heat treatment at 800–1200 °C; the fluctuation of alignment of these films, evaluated by reciprocal-space mapping of asymmetric x-ray diffraction, was markedly small, as comparable to that of the substrates. The LSMO films with x = 0.1−0.3 showed metallic conduction behavior at 25–300 K, and the resistivity was as low as that of LSMO single crystals, e.g., 4.5 × 10−4 Ω · cm at 150 K for the film with x = 0.3.

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals Reciprocal Space Mapping of Epitaxial Materials Using Position-Sensitive X-ray Detection

1994 ◽  
Vol 38 ◽  
pp. 201-213 ◽  
Author(s):  
S. R. Lee ◽  
B. L. Doyle ◽  
T. J. Drummond ◽  
J. W. Medernach ◽  
P. Schneider
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
X Rays ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Rocking Curve ◽  
X Ray ◽  
Position Sensitive ◽  
Average Size ◽  
Short Time

Abstract Reciprocal space mapping can be efficiently carried out using a position-sensitive x-ray detector (PSD) coupled to a traditional double-axis diffractometer. The PSD offers parallel measurement of the total scattering angle of all diffracted x-rays during a single rocking-curve scan. As a result, a two-dimensional reciprocal space map can be made in a very short time similar to that of a one-dimensional rocking-curve scan. Fast, efficient reciprocal space mapping offers numerous routine advantages to the x-ray diffraction analyst. Some of these advantages arc the explicit differentiation of lattice strain from crystal orientation effects in strain-relaxed heteroepitaxial layers; the nondestructive characterization of the size, shape and orientation of nanocrystalline domains in ordered-alloy epilayers; and the ability to measure the average size and shape of voids in porous epilayers. Here, the PSD-based diffractometer is described, and specific examples clearly illustrating the advantages of complete reciprocal space analysis are presented.

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