Particle-Assisted Oriented Deposition of Diamond Thin Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray ◽  
Diamond Particles ◽  
Film Synthesis ◽  
Diamond Powders ◽  
Hot Filament

AbstractWe have developed a method for <111> oriented diamond film synthesis using micron-sized diamond particles. Different size of diamond powders were electrophoretically seeded on silicon substrates using diamond suspensions in organic solvents (acetone, methanol, and ethanol). Diamond suspension in acetone was found to be the best for obtaining uniform diamond seeding by electrophoresis. The thickness of diamond seeded films was changed by varying the applied voltage to observe the effect on the orientation of diamond particles. Then diamond films were deposited by the hot filament chemical vapor deposition (HFCVD) process. A preferred orientation with <111> direction normal to the substrate was obtained for monolayer coatings. The surface morphology, crystal orientation, and quality of diamond films were investigated using scanning electron microscopy, x-ray diffractometry, and Raman spectroscopy.

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1994 ◽  
Vol 140 (3-4) ◽  
pp. 454-458 ◽  
Author(s):  
C.H. Chao ◽  
G. Popovici ◽  
E.J. Charlson ◽  
E.M. Charlson ◽  
J.M. Meese ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Hot Filament

Raman scattering characterization of (100) and (111) oriented diamond films grown in the same run by hot filament chemical vapor deposition

1994 ◽  
Vol 9 (11) ◽  
pp. 2839-2844 ◽  
Author(s):  
G. Popovici ◽  
S. Khasawinah ◽  
T. Sung ◽  
M.A. Prelas ◽  
B.V. Spitsyn ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Deposition ◽  
Chemical Vapor ◽  
Infrared Excitation ◽  
Hot Filament

The crystalline quality of a diamond film with two different preferential orientations (100) and (111), obtained in the same run by hot filament chemical deposition, has been studied. The quality of the film determined by Raman spectroscopy measurements was found to be nearly the same for both orientations. The second order Raman spectrum for diamond film was observed by using an infrared excitation.

Phase Transformation of Smooth Diamond Films Grown by hot Filament Chemical Vapor Deposition on Positively Biased Silicon Substrates.

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Popovici ◽  
C. H. Chao ◽  
M. A. Prelas ◽  
E. J. Charlson ◽  
J. M. Meese
Keyword(s):  
Phase Transformation ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
Si Substrates ◽  
Hot Filament

ABSTRACTSmooth diamond films have been grown by hot filament chemical vapor deposition under d.c. bias on mirror-polished Si substrates. Films a few micrometers thick were obtained in 30 minutes. Raman spectra showed very broad diamond peaks. X-ray diffraction showed the presence of diamond and also other carbon phase with a line 2.11 Å. With time, the films apparently underwent a phase transformation.

X-ray Characterization of Thin Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition

1990 ◽  
Vol 34 ◽  
pp. 543-555
Author(s):  
Richard F. Hamilton ◽  
Diwakar Garg ◽  
Keith A. Wood ◽  
David S. Hoover
Keyword(s):  
Crystal Structure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Free Standing ◽  
X Ray ◽  
Long Wavelength ◽  
Transmission Properties ◽  
Hot Filament

AbstractSynthesizing thin diamond films by chemical vapor deposition (CVD) is the most recent and technologically important development in the thin-film field. Thin diamond films are useful in many applications because of their unique physical, chemical, optical, and electronic properties.To assess thin diamond films’ suitability for support membranes in X-ray lithography, X-ray diffraction was used to characterize the crystal structure and orientation of these films deposited on silicon wafers by hot-filament assisted CVD. X-ray transmission properties of free-standing thin diamond films prepared by selectively etching silicon substrates were characterized by X-ray fluorescence in short and long wavelength regions.This paper discusses conventional and grazing incidence diffraction techniques used to study the crystal structure of thin diamond films and compares the results with film morphology. It also describes X-ray transmission properties of these films in terms of Beer's Law, the mass absorption coefficient, and the wavelength of attenuated radiation. Finally, it reveals the long wavelength regions for optimum X-ray lithography operations using polycrystalline diamond (PCD) film.

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 289-294 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Charge Carrier Density ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Hot Filament

ABSTRACTFor the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1995 ◽  
Vol 10 (8) ◽  
pp. 2011-2016 ◽  
Author(s):  
Galina Popovici ◽  
C.H. Chao ◽  
M.A. Prelas ◽  
E.J. Charlson ◽  
J.M. Meese
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Changes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Initial Structure ◽  
Si Substrates ◽  
Diffraction Patterns ◽  
Hot Filament

Diamond films have been grown by hot filament chemical vapor deposition (CVD) on mirror-polished positively biased Si substrates. Very smooth films a few micrometers thick were obtained in only 30 min. SEM, x-ray diffraction patterns, and Raman were used to characterize the films. Not only diamond but other carbon phases, were also detected. The initial structure showed a high density of defects and large stresses. Structural changes in time were found to occur with films apparently undergoing a phase transformation.

Neutron irradiation and annealing of 10B doped chemical vapor deposited diamond films

1995 ◽  
Vol 10 (10) ◽  
pp. 2523-2530 ◽  
Author(s):  
S.A. Khasawinah ◽  
Galina Popovici ◽  
J. Farmer ◽  
T. Sung ◽  
M.A. Prelas ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Unirradiated Sample ◽  
High Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Hot Filament

10B doped diamond films grown by hot filament chemical vapor deposition were neutron irradiated at moderately high fluence levels. The as-irradiated and annealed samples, along with an unirradiated sample, were analyzed using Raman spectroscopy and x-ray diffraction. It was found that a non-diamond amorphous phase was formed on irradiation. This phase transformed back to diamond on annealing. No graphite formation was observed. A comparison with nanodiamond powder was made. A similarity between irradiated diamond films and nanocrystalline diamond powder is discussed.

X-Ray Characterization of Thin Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition

1991 ◽  
pp. 543-555
Author(s):  
Richard F. Hamilton ◽  
Diwakar Garg ◽  
Keith A. Wood ◽  
David S. Hoover
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament

Synchrotron radiation X-ray analysis of boron-doped diamond films grown by hot-filament assisted chemical vapor deposition

2002 ◽  
Vol 11 (2) ◽  
pp. 153-159 ◽  
Author(s):  
Leide L.G Silva ◽  
Margareth K Franco ◽  
Fabiano Yokaichiya ◽  
Neidenei G Ferreira ◽  
Evaldo J Corat
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Hot Filament
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