Large area Pulsed Laser Deposition of Aurivillius-Type Layered Perovskite Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
A. Pignolet ◽  
C. Curran ◽  
S. Welke ◽  
S. Senz ◽  
M. Alexe ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Electrical Measurements ◽  
Large Area ◽  
A New Technique ◽  
Composition Structure ◽  
Near Future

AbstractThin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by pulsed laser deposition (PLD) on SrTiO3 single crystal substrates. Bi4 Ti3O12 has been deposited as well on a CeO2JYSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3”- Si wafer. The obtained films have a uniform thickness over a diameter greater than 50 mm, corresponding to an area of about 20 cm2. It is likely that homogeneous deposition on entire wafers of 3-inch in diameter will be accomplished in the near future. The composition, structure, and electrical properties of the films are presented.

Large area pulsed laser deposition of aurivilliustype layered perovskite thin films

1997 ◽  
Vol 202 (1) ◽  
pp. 285-298 ◽  
Author(s):  
Alain Pignolet ◽  
Susanne Welke ◽  
Christopher Curran ◽  
Marin Alexe ◽  
Tephan Senz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Large Area

Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition

1999 ◽  
Vol 225 (1) ◽  
pp. 201-220 ◽  
Author(s):  
A. Pignolet ◽  
M. Alexe ◽  
K. M. Satyalakshmi ◽  
St. Senz ◽  
D. Hesse ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Large Area

Large area pulsed laser deposition of YBCO thin films

1999 ◽  
Vol 9 (2) ◽  
pp. 2359-2362 ◽  
Author(s):  
B. Schey ◽  
W. Bieel ◽  
M. Kuhn ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area ◽  
Ybco Thin Films

Large-area and double-sided pulsed laser deposition of Y-Ba-Cu-O thin films applied to HTSC microwave devices

1997 ◽  
Vol 7 (2) ◽  
pp. 1240-1243 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
D. Natusch ◽  
H. Borner ◽  
T. Tharigen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Microwave Devices ◽  
Large Area

scholarly journals Structural and optical properties of CdO and CdO0.99Cu0.01 thin films prepared by pulsed laser deposition technique

2019 ◽  
Vol 13 (28) ◽  
pp. 170-178
Author(s):  
Eman K. Hassan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Cadmium Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Energy Curve ◽  
Electrical Measurements ◽  
Structural And Optical Properties ◽  
Direct Band

Structural and optical properties of CdO and CdO0.99Cu0.01 thinfilms were prepared in this work. Cadmium Oxide (CdO) andCdO0.99Cu0.01semiconducting films are deposited on glass substratesby using pulsed laser deposition method (PLD) using SHG with QswitchedNd:YAG pulsed laser operation at 1064nm in 6x10-2 mbarvacuum condition and frequency 6 Hz. CdO and CdO0.99Cu0.01 thinfilms annealed at 550 C̊ for 12 min. The crystalline structure wasstudied by X-ray diffraction (XRD) method and atomic forcemicroscope (AFM). It shows that the films are polycrystalline.Optical properties of thin films were analyzed. The direct band gapenergy of CdO and CdO0.99Cu0.01 thin films were determined from(αhυ)1/2 vs. photon energy curve and found to be 2.3 eV for CdO thinfilm, comparing with that the CdO0.99Cu0.01film which found to be2.2eV. The electrical measurements shows that the conductivity andmobility of the charge carriers increase when Cu doped CdO.

In Situ Synthesis of Single-Phase Skutterudite Thin Films (CoSb3 and IrSb3) by Pulsed Laser Deposition

1998 ◽  
Vol 526 ◽  
Author(s):  
J.C. Caylor ◽  
A.M. Stacy ◽  
P. Bandaru ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Measurements ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
High Vapor

AbstractRecent advances in doping and substitutional alloying of bulk skutterudite phases based on the CoAs3 structure have yielded compositions with high thermoelectric figures-of-merit (“ZT”). It is postulated that further enhancements in ZT may be attained in artificially-structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. This work describes the growth of single-phase skutterudite thin films (CoSb3 and IrSb3) by pulsed laser deposition. A substrate temperature of 250°C has been found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature, the film is depleted of antimony due to its high vapor pressure. However, when films are grown from antimony-rich targets, the substrate temperature can be increased to at least 350°C without losing the skutterudite phase. Films from both target types were characterized with X-ray diffraction and Rutherford-Back-Scattering (RBS) to reveal structure and stoichiometry. Some preliminary electrical measurements will also be shown.

Three simple methods to obtain large area thin films by pulsed laser deposition

2001 ◽  
Vol 11 (1) ◽  
pp. 3852-3855 ◽  
Author(s):  
A.S. Kuzanyan ◽  
G.R. Badalyan ◽  
V.R. Nikoghosyan ◽  
A.L. Gyulamiryan ◽  
A.M. Gulian
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area

Some peculiarities of pulsed laser deposition of large area thin films

2001 ◽  
Vol 11 (1) ◽  
pp. 3859-3862 ◽  
Author(s):  
A.S. Kuzanyan ◽  
G.R. Badalyan ◽  
V.R. Nikoghosyan ◽  
S.R. Harutyunyan
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area

scholarly journals Gas Sensing by SnO 2 Thin Films Prepared by Large-area Pulsed Laser Deposition

2015 ◽  
Vol 120 ◽  
pp. 88-91 ◽  
Author(s):  
Elisabeth M. Preiß ◽  
Tobias Rogge ◽  
Andreas Krauß ◽  
Helmut Seidel
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gas Sensing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Large Area
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