In Situ Synthesis of Single-Phase Skutterudite Thin Films (CoSb3 and IrSb3) by Pulsed Laser Deposition

1998 ◽  
Vol 526 ◽  
Author(s):  
J.C. Caylor ◽  
A.M. Stacy ◽  
P. Bandaru ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Measurements ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
High Vapor

AbstractRecent advances in doping and substitutional alloying of bulk skutterudite phases based on the CoAs3 structure have yielded compositions with high thermoelectric figures-of-merit (“ZT”). It is postulated that further enhancements in ZT may be attained in artificially-structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. This work describes the growth of single-phase skutterudite thin films (CoSb3 and IrSb3) by pulsed laser deposition. A substrate temperature of 250°C has been found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature, the film is depleted of antimony due to its high vapor pressure. However, when films are grown from antimony-rich targets, the substrate temperature can be increased to at least 350°C without losing the skutterudite phase. Films from both target types were characterized with X-ray diffraction and Rutherford-Back-Scattering (RBS) to reveal structure and stoichiometry. Some preliminary electrical measurements will also be shown.

THE ROLES OF AMBIENT OXYGEN AND SUBSTRATE TEMPERATURE ON GROWTH OF DIAMOND THIN FILMS BY PULSED LASER DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Ambient Oxygen ◽  
Diamond Thin Films ◽  
Substrate Temperatures

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Low Resistivity

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

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