Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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Morphology-dependent spin Seebeck effect in yttrium iron garnet thin films prepared by metal-organic decomposition

Ceramics International ◽

10.1016/j.ceramint.2021.02.249 ◽

2021 ◽

Author(s):

Trinh Nguyen Thi ◽

Phuoc Cao Van ◽

Duc Duong Viet ◽

Viet Dong Quoc ◽

Hayeong Ahn ◽

...

Keyword(s):

Thin Films ◽

Yttrium Iron Garnet ◽

Seebeck Effect ◽

Yttrium Iron ◽

Spin Seebeck Effect ◽

Metal Organic ◽

Iron Garnet ◽

Organic Decomposition

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Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Modern Electronic Materials ◽

10.3897/j.moem.4.2.33306 ◽

2018 ◽

Vol 4 (2) ◽

pp. 77-85

Author(s):

Deepak Bhatia ◽

Sandipta Roy ◽

S. Nawaz ◽

R.S. Meena ◽

V.R. Palkar

Keyword(s):

Thin Films ◽

Electrical Transport ◽

Microelectromechanical Systems ◽

Electrostatic Force ◽

Charge Trapping ◽

Electrostatic Force Microscopy ◽

Zno Films ◽

Phase Dependence ◽

Force Microscopy ◽

Electric Charge Distribution

In this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi0.7Dy0.3FeO3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

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High DC sensitivity of VOxbolometer thin films on Si3N4/SiO2membranes fabricated by metal–organic decomposition

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.068009 ◽

2014 ◽

Vol 53 (6) ◽

pp. 068009 ◽

Cited By ~ 17

Author(s):

Takashi Uchida ◽

Akihito Matsushita ◽

Takashi Tachiki

Keyword(s):

Thin Films ◽

Metal Organic ◽

Organic Decomposition

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Effects of vicinal substrates on the orientation of Bi2Sr2CaCu2O8+x thin films when the metal-organic decomposition method is used

Journal of Physics Conference Series ◽

10.1088/1742-6596/1293/1/012012 ◽

2019 ◽

Vol 1293 ◽

pp. 012012 ◽

Cited By ~ 1

Author(s):

Y Yamada ◽

T Okamoto

Keyword(s):

Thin Films ◽

Decomposition Method ◽

Metal Organic ◽

Organic Decomposition

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Atmospheric pressure synthesis of In2Se3, Cu2Se, and CuInSe2 without external selenization from solution precursors

Journal of Materials Research ◽

10.1557/jmr.2009.0155 ◽

2009 ◽

Vol 24 (4) ◽

pp. 1375-1387 ◽

Cited By ~ 6

Author(s):

Jennifer A. Nekuda Malik ◽

Maikel F.A.M. van Hest ◽

Alexander Miedaner ◽

Calvin J. Curtis ◽

Jennifer E. Leisch ◽

...

Keyword(s):

Thin Films ◽

Atmospheric Pressure ◽

Phase Evolution ◽

Significant Degree ◽

Metal Organic ◽

Pressure Synthesis ◽

Atmospheric Pressure Synthesis ◽

Composition Changes ◽

Specific Phase ◽

Organic Decomposition

In2Se3, Cu2Se, and CuInSe2 thin films have been successfully fabricated using novel metal organic decomposition (MOD) precursors and atmospheric pressure-based deposition and processing. The phase evolution of the binary (In-Se and Cu-Se) and ternary (Cu-In-Se) MOD precursor films was examined during processing to evaluate the nature of the phase and composition changes. The In-Se binary precursor exhibits two specific phase regimes: (i) a cubic-InxSey phase at processing temperatures between 300 and 400 °C and (ii) the γ-In2Se3 phase for films annealed above 450 °C. Both phases exhibit a composition of 40 at.% indium and 60 at.% selenium. The binary Cu-Se precursor films show more diverse phase behavior, and within a narrow temperature processing range a number of Cu-Se phases, including CuSe2, CuSe, and Cu2Se, can be produced and stabilized. The ternary Cu-In-Se precursor can be used to produce relatively dense CuInSe2 films at temperatures between 300 and 500 °C. Layering the binary precursors together has provided an approach to producing CuInSe2 thin films; however, the morphology of the layered binary structure exhibits a significant degree of porosity. An alternative method of layering was explored where the Cu-Se binary was layered on top of an existing indium-gallium-selenide layer and processed. This method produced highly dense and large-grained (>3 µm) CuInSe2 thin films. This has significant potential as a manufacturable route to CIGS-based solar cells.

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