High DC sensitivity of VOxbolometer thin films on Si3N4/SiO2membranes fabricated by metal–organic decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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Morphology-dependent spin Seebeck effect in yttrium iron garnet thin films prepared by metal-organic decomposition

Ceramics International ◽

10.1016/j.ceramint.2021.02.249 ◽

2021 ◽

Author(s):

Trinh Nguyen Thi ◽

Phuoc Cao Van ◽

Duc Duong Viet ◽

Viet Dong Quoc ◽

Hayeong Ahn ◽

...

Keyword(s):

Thin Films ◽

Yttrium Iron Garnet ◽

Seebeck Effect ◽

Yttrium Iron ◽

Spin Seebeck Effect ◽

Metal Organic ◽

Iron Garnet ◽

Organic Decomposition

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Effects of vicinal substrates on the orientation of Bi2Sr2CaCu2O8+x thin films when the metal-organic decomposition method is used

Journal of Physics Conference Series ◽

10.1088/1742-6596/1293/1/012012 ◽

2019 ◽

Vol 1293 ◽

pp. 012012 ◽

Cited By ~ 1

Author(s):

Y Yamada ◽

T Okamoto

Keyword(s):

Thin Films ◽

Decomposition Method ◽

Metal Organic ◽

Organic Decomposition

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Atmospheric pressure synthesis of In2Se3, Cu2Se, and CuInSe2 without external selenization from solution precursors

Journal of Materials Research ◽

10.1557/jmr.2009.0155 ◽

2009 ◽

Vol 24 (4) ◽

pp. 1375-1387 ◽

Cited By ~ 6

Author(s):

Jennifer A. Nekuda Malik ◽

Maikel F.A.M. van Hest ◽

Alexander Miedaner ◽

Calvin J. Curtis ◽

Jennifer E. Leisch ◽

...

Keyword(s):

Thin Films ◽

Atmospheric Pressure ◽

Phase Evolution ◽

Significant Degree ◽

Metal Organic ◽

Pressure Synthesis ◽

Atmospheric Pressure Synthesis ◽

Composition Changes ◽

Specific Phase ◽

Organic Decomposition

In2Se3, Cu2Se, and CuInSe2 thin films have been successfully fabricated using novel metal organic decomposition (MOD) precursors and atmospheric pressure-based deposition and processing. The phase evolution of the binary (In-Se and Cu-Se) and ternary (Cu-In-Se) MOD precursor films was examined during processing to evaluate the nature of the phase and composition changes. The In-Se binary precursor exhibits two specific phase regimes: (i) a cubic-InxSey phase at processing temperatures between 300 and 400 °C and (ii) the γ-In2Se3 phase for films annealed above 450 °C. Both phases exhibit a composition of 40 at.% indium and 60 at.% selenium. The binary Cu-Se precursor films show more diverse phase behavior, and within a narrow temperature processing range a number of Cu-Se phases, including CuSe2, CuSe, and Cu2Se, can be produced and stabilized. The ternary Cu-In-Se precursor can be used to produce relatively dense CuInSe2 films at temperatures between 300 and 500 °C. Layering the binary precursors together has provided an approach to producing CuInSe2 thin films; however, the morphology of the layered binary structure exhibits a significant degree of porosity. An alternative method of layering was explored where the Cu-Se binary was layered on top of an existing indium-gallium-selenide layer and processed. This method produced highly dense and large-grained (>3 µm) CuInSe2 thin films. This has significant potential as a manufacturable route to CIGS-based solar cells.

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