MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources

1996 ◽  
Vol 449 ◽  
Author(s):  
M. A. L. Johnson ◽  
Zhonghai Yu ◽  
C. Boney ◽  
W. H. Rowland ◽  
W. C. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level ◽  
Buffer Layers ◽  
Rf Plasma ◽  
Multiple Sources ◽  
Single Quantum Well ◽  
Active Nitrogen ◽  
Mbe Growth ◽  
Plasma Sources ◽  
Quantum Well Structures

ABSTRACTMBE growth of III-V nitrides is being studied at NCSU using MOVPE grown GaN buffer layers on SiC as substrates. Rf plasma sources are being used for the generation of active nitrogen during MBE deposition. Through the use of multiple rf plasma sources, sufficient active nitrogen is generated in order to examine the properties of III-V nitride layers grown at higher substrate temperatures and growth rates. The resulting MBE-grown GaN films exhibit remarkably intense photoluminescence (PL) dominated by a sharp band-edge peak at 3.409 eV having a FWHM of 36 meV at 300K. No deep level emission is observed. AlGaN and InGaN films and quantum well structures have also been prepared using multiple sources. A modulated beam MBE approach is used in conjunction with the multiple rf plasma sources to grow InGaN. RHEED and TEM studies reveal flat 2D InGaN quantum well structures. Depending on the indium content, GaN/InGaN single-quantum-well structures exhibit electroluminescence at 300K peaked in the blue-violet to the green spectral region.

Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 575-579
Author(s):  
T.S. Lay ◽  
E.Y. Lin ◽  
C.Y. Chang ◽  
K.M. Kong ◽  
L.P. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Spectroscopic Study ◽  
Molecular Beam ◽  
Deep Level ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

scholarly journals Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation

1988 ◽  
Vol 144 ◽  
Author(s):  
Fulin Xiong ◽  
T. A. Tombrello ◽  
H. Wang ◽  
T. R. Chen ◽  
H. Z. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
High Performance ◽  
Deep Level ◽  
Threshold Current ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Electrical Isolation ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

ABSTRACTMeV oxygen ion implantation in GaAs/AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A l0μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AIGaAs.

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

1986 ◽  
Vol 48 (14) ◽  
pp. 940-942 ◽  
Author(s):  
R. K. Tsui ◽  
G. D. Kramer ◽  
J. A. Curless ◽  
M. S. Peffley
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Infrared absorption in HgCdTe/CdTe single quantum well structures

1993 ◽  
Vol 8 (1S) ◽  
pp. S296-S299 ◽  
Author(s):  
R Sizmann ◽  
P Helgesen ◽  
H Steen ◽  
T Skauli ◽  
T Colin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Absorption ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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