Field Emission from Tetrahedrally Bonded Amorphous Carbon

1997 ◽  
Vol 471 ◽  
Author(s):  
W. I. Milne ◽  
J. Robertson ◽  
B. S. Satyanarayanan ◽  
A. Hart
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Applied Field ◽  
Vacuum Arc ◽  
Threshold Field ◽  
Nitrogen Doped ◽  
Bonding Ratio ◽  
Current Densities ◽  
Filtered Cathodic Vacuum Arc ◽  
Tetrahedrally Bonded

ABSTRACTA series of tetrahedrally bonded carbon (ta-C) films have been produced using a Filtered Cathodic Vacuum Arc System. The threshold field and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical undoped ta-C films have a threshold field of 15–20V/μm and optimally nitrogen doped films exhibit threshold fields as low as ∼ 5 V/μm. Current densities of typically 10-4 A/cm2 at an applied field of 20V/micron were also obtained.

Low Threshold Field Emission From Nanocluster Carbon Films

1999 ◽  
Vol 593 ◽  
Author(s):  
W.I. Milne ◽  
B.S. Satyanarayana ◽  
J. Robertson
Keyword(s):  
Field Emission ◽  
Deposition Process ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Threshold Field ◽  
Bonding Ratio ◽  
Low Threshold ◽  
Current Densities ◽  
Vacuum Arc Deposition ◽  
Arc Deposition

ABSTRACTCarbon films with variable sp3/sp2 bonding ratio can be deposited on a variety of substrates at room temperature, using the cathodic vacuum arc deposition process. The variation in their surface morphology as a function of He and N2partial pressure during growth have been investigated and it has been shown that the morphology of the films can be varied from the mirror like smooth tetrahedrally bonded carbon (ta-C) films through nanocluster to fibrous type carbon. This paper reviews the work carried out on Field Emission from these various carbon films. Threshold fields as low as 1 V/μm for emission current densities of 1 μA/cm2 and emission site densities of up to 104 -105/cm2 have been obtained.

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