Excitonic Enhanced Optical Gain Of GaN/AlGaN Quantum Wells With Localized States

1997 ◽  
Vol 482 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Wells ◽  
Carrier Density ◽  
Optical Gain ◽  
Localized States ◽  
Many Body ◽  
Quantum Well Structures ◽  
The Many ◽  
Temperature Green’S Function

AbstractWe have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states axe introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

scholarly journals Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1999 ◽  
Vol 4 (S1) ◽  
pp. 112-117 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum Well Structures

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Suzuki ◽  
T. Uenoyama
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Structures ◽  
Carrier Density ◽  
Uniaxial Strain ◽  
Crystal Symmetry ◽  
Quantum Well Structures ◽  
Electronic And Optical Properties ◽  
Bulk Gan

ABSTRACTElectronic structures and optical gains of bulk GaN and GaN/AlGaN quantum wells (QWs) are theoretically investigated for the wurtzite and the zincblende structures, using the k-p theory. It is found that the lower crystal symmetry, that is the wurtzite, is preferable for the lower threshold carrier density in the bulk. Although the QW structure leads to symmetry lowering only in the zincblende, we can not find a significant benefit of the zincblende QWs. As for the reduction of the threshold carrier density, biaxial strains are more effective in the zincblende. However, the threshold carrier density is still higher than in the wurtzite. It is proposed that the uniaxial strain in the c-plane of the wurtzite is more useful for reducing it.

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