Magnetic Properties of Organic Ferromagnetic TDAE-C60 Single Crystals and Thin Films

1997 ◽  
Vol 488 ◽  
Author(s):  
M. Tokumoto ◽  
Y. Tsubaki ◽  
K. Pokhodnya ◽  
Y. sakakibara ◽  
A. Omerzu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Magnetic Properties ◽  
Single Crystals ◽  
Recent Progress ◽  
Spontaneous Magnetization ◽  
Ferromagnetic Phase ◽  
Diffusion Method ◽  
Ferromagnetic Phase Transition

AbstractRecent progress in the study on magnetic properties of molecular soft ferromagnet TDAE-C60 (where TDAE is tetrakis(dimethylamino) ethylene) is reported. Both crystalline and thin film samples are prepared by the diffusion method and the temperature and field dependence of magnetization are studied by SQUID magnetometer. The magnetic behaviors of single crystals were found to vary from sample to sample. In best single crystals, the saturation magnetization as high as 1.0 μB/C60 has been observed. Spontaneous magnetization and its temperature dependence was evaluated from the Arrott plot. The ferromagnetic phase transition was also observed in TDAE-C60 thin films.

Ferromagnetic phase transition in ultra-thin films

2006 ◽  
Vol 243 (6) ◽  
pp. 1352-1359 ◽  
Author(s):  
S. Tuleja ◽  
J. Kecer ◽  
V. Ilkovič
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferromagnetic Phase ◽  
Ferromagnetic Phase Transition

Photoinduced Heating and Phase Transition in CMR Materials

2001 ◽  
Vol 690 ◽  
Author(s):  
N. Noginova ◽  
E. Arthur ◽  
R. Ulysse ◽  
E. S. Gillman ◽  
C. E. Bonner
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Phase Transition ◽  
Laser Light ◽  
Ferromagnetic Phase ◽  
Relaxation Processes ◽  
Light Illumination ◽  
Fast Switching ◽  
Ferromagnetic Phase Transition ◽  
Time Specific

ABSTRACTFast switching from conductor to insulator induced by laser light illumination has been studied in single crystals and thin films of La1−xSrxMnO3 in the range of the ferromagnetic phase transition. Based on our experimental data on the photoresponse as a function of temperature, electric current, and intensity, we have demonstrated that the switching and relaxation processes are determined by heating and heat conduction processes. The relaxation time, specific heat and the latent heat constants have been estimated.

MAGNETIC PROPERTIES OF Fe0.95Co0.05Si2 SEMICONDUCTING FILM

2012 ◽  
Vol 26 (15) ◽  
pp. 1250097
Author(s):  
Y. P. HAN ◽  
X. J. WANG ◽  
Q. R. HOU ◽  
Q. W. WANG ◽  
J. X. WANG
Keyword(s):  
Phase Transition ◽  
Magnetic Properties ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
High Vacuum ◽  
Ferromagnetic Phase ◽  
High Seebeck Coefficient ◽  
Ferromagnetic Phase Transition ◽  
Semiconducting Film

The Fe 0.95 Co 0.05 Si 2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about 380 K. The possible reason for the ferromagnetism of the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was discussed.

Magnetic properties of self-assembled Co clusters on Au(111) below the ferromagnetic phase transition

1999 ◽  
Vol 11 (43) ◽  
pp. 8445-8451 ◽  
Author(s):  
E Dudzik ◽  
H A Dürr ◽  
S S Dhesi ◽  
G van der Laan ◽  
D Knabben ◽  
...  
Keyword(s):  
Phase Transition ◽  
Magnetic Properties ◽  
Ferromagnetic Phase ◽  
Ferromagnetic Phase Transition ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document