Development of Stable a-Si/a-SiGe Tandem Solar Cell Submodules Deposited by a Very High Hydrogen Dilution at Low Temperature

1998 ◽  
Vol 507 ◽  
Author(s):  
Masaki Shima ◽  
Masao Isomura ◽  
Eiji Maruyama ◽  
Shingo Okamoto ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Structural Variations ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Hydrogen Radicals ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High

ABSTRACTThe world's highest stabilized efficiency of 9.5% (light-soaked and measured by the Japan Quality Assurance Organization (JQA)) for an a-Si/a-SiGe superstrate-type solar cell submodule (area: 1200 cm2) has been achieved. This value was obtained by investigating the effects of very-high hydrogen dilution of up to 54:1 (= H2: SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) deposition at a low substrate temperature (Ts). It was found that deterioration of the film properties of a-SiGe:H when Ts decreases under low hydrogen dilution conditions can be suppressed by the high hydrogen dilution. This finding probably indicates that the energy provided by hydrogen radicals substitutes for the lost energy caused by the decrease in Ts and that sufficient surface reactions can occur. In addition, results from an estimation of the hydrogen and germanium contents of a-SiGe:H suggest the occurrence of some kinds of structural variations by the high hydrogen dilution. A guideline for optimization of a-SiGe:H films for solar cells can be presented on the basis of the experimental results. The possibility of a-SiGe:H as a narrow gap material for a-Si stacked solar cells in contrast with microcrystalline silicon (μ c-Si:H) will also be discussed from various standpoints. At present, a-SiGe:H is considered to have an advantage over μ1 c-Si:H.

Effects of very high hydrogen dilution at low temperature on hydrogenated amorphous silicon germanium

1998 ◽  
Vol 227-230 ◽  
pp. 442-446 ◽  
Author(s):  
Masaki Shima ◽  
Akira Terakawa ◽  
Masao Isomura ◽  
Hisao Haku ◽  
Makoto Tanaka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High

Effects of high hydrogen dilution at low temperature on the film properties of hydrogenated amorphous silicon germanium

1997 ◽  
Vol 71 (1) ◽  
pp. 84-86 ◽  
Author(s):  
Masaki Shima ◽  
Akira Terakawa ◽  
Masao Isomura ◽  
Makoto Tanaka ◽  
Seiichi Kiyama ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Film Properties ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Amorphous Silicon-Carbon Alloys for Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Yuan-Min Li
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
Open Circuit ◽  
Hydrogen Dilution ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Open Circuit Voltages

Recent efforts to optimize undoped, glow-discharge hydrogenated amorphous silicon-carbon alloys (a-SiC:H) with 1.9-2.0 eV bandgaps for solar cell applications are reviewed. Hydrogen dilution coupled with relatively low substrate temperatures (below 200 °C) have led to great improvements in the optical and phototransport properties of a-SiC:H films. The issue of alternative carbon feedstocks other than methane (CH4) will be explored. The improved a-SiC:H alloys have resulted in solar cells with high open circuit voltages (V∞ > 1.0 volt) and high fill factors (> 0.7). Further, the a-SiC:H solar cell instability upon prolonged light exposure has been much reduced. Correlation will be made between the properties of bulk undoped a-SiC:H films and the performance of p-i-nsingle junction solar cells using corresponding a-SiC:H thin i-layers.

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