High-Rate Deposition of High-Quality Hydrogenated Amorphous Silicon Germanium Using Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition with a High Hydrogen Dilution

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7198-7204 ◽  
Author(s):  
Masaki Shima ◽  
Masao Isomura ◽  
Ken-ichiro Wakisaka ◽  
Kenji Murata ◽  
Makoto Tanaka
Keyword(s):  
Silicon Germanium ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

Development of Stable a-Si/a-SiGe Tandem Solar Cell Submodules Deposited by a Very High Hydrogen Dilution at Low Temperature

1998 ◽  
Vol 507 ◽  
Author(s):  
Masaki Shima ◽  
Masao Isomura ◽  
Eiji Maruyama ◽  
Shingo Okamoto ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Structural Variations ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Hydrogen Radicals ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High

ABSTRACTThe world's highest stabilized efficiency of 9.5% (light-soaked and measured by the Japan Quality Assurance Organization (JQA)) for an a-Si/a-SiGe superstrate-type solar cell submodule (area: 1200 cm2) has been achieved. This value was obtained by investigating the effects of very-high hydrogen dilution of up to 54:1 (= H2: SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) deposition at a low substrate temperature (Ts). It was found that deterioration of the film properties of a-SiGe:H when Ts decreases under low hydrogen dilution conditions can be suppressed by the high hydrogen dilution. This finding probably indicates that the energy provided by hydrogen radicals substitutes for the lost energy caused by the decrease in Ts and that sufficient surface reactions can occur. In addition, results from an estimation of the hydrogen and germanium contents of a-SiGe:H suggest the occurrence of some kinds of structural variations by the high hydrogen dilution. A guideline for optimization of a-SiGe:H films for solar cells can be presented on the basis of the experimental results. The possibility of a-SiGe:H as a narrow gap material for a-Si stacked solar cells in contrast with microcrystalline silicon (μ c-Si:H) will also be discussed from various standpoints. At present, a-SiGe:H is considered to have an advantage over μ1 c-Si:H.

Effects of high hydrogen dilution at low temperature on the film properties of hydrogenated amorphous silicon germanium

1997 ◽  
Vol 71 (1) ◽  
pp. 84-86 ◽  
Author(s):  
Masaki Shima ◽  
Akira Terakawa ◽  
Masao Isomura ◽  
Makoto Tanaka ◽  
Seiichi Kiyama ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Film Properties ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Effects of very high hydrogen dilution at low temperature on hydrogenated amorphous silicon germanium

1998 ◽  
Vol 227-230 ◽  
pp. 442-446 ◽  
Author(s):  
Masaki Shima ◽  
Akira Terakawa ◽  
Masao Isomura ◽  
Hisao Haku ◽  
Makoto Tanaka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High
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