New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

AbstarctWe have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

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Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

MRS Proceedings ◽

10.1557/proc-509-179 ◽

1998 ◽

Vol 509 ◽

Author(s):

Moo-Sup Lim ◽

Cheol-Min Park ◽

Min-Koo Han ◽

Yearn-Ik Choi

Keyword(s):

Current Density ◽

Emission Current Density ◽

Titanium Silicide ◽

Emission Current ◽

Cathode Voltage ◽

Lateral Field ◽

Field Emitter ◽

Turn On ◽

Field Emitter Arrays ◽

The Stability

AbstractWe have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

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Undoped poly-Si tip lateral field emitter arrays with stable anode current by self-current limiting

Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382) ◽

10.1109/ivmc.1998.728667 ◽

2002 ◽

Author(s):

Moo-Sup Lim ◽

Cheol-Min Park ◽

Min-Koo Han ◽

Yearn-Ik Choi

Keyword(s):

Anode Current ◽

Lateral Field ◽

Field Emitter ◽

Field Emitter Arrays ◽

Current Limiting

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Lateral field emitter arrays with high emission currents and wide operation region by high field activation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1527638 ◽

2003 ◽

Vol 21 (1) ◽

pp. 506 ◽

Cited By ~ 2

Author(s):

Jae-Hoon Lee ◽

Myoung-Bok Lee ◽

Sung-Ho Hahm ◽

Jung-Hee Lee ◽

Hwa-Il Seo ◽

...

Keyword(s):

High Field ◽

Lateral Field ◽

Field Emitter ◽

Field Emitter Arrays ◽

High Emission

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Preparation of ZnO nanowires for high emission current field emitter arrays

2017 30th International Vacuum Nanoelectronics Conference (IVNC) ◽

10.1109/ivnc.2017.8051592 ◽

2017 ◽

Author(s):

Libing Wang ◽

Long Zhao ◽

Zhipeng Zhang ◽

Juncong She ◽

Shaozhi Deng ◽

...

Keyword(s):

Zno Nanowires ◽

Emission Current ◽

Current Field ◽

Field Emitter ◽

Field Emitter Arrays ◽

High Emission

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Tower structure Si field emitter arrays with large emission current

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499222 ◽

2002 ◽

Cited By ~ 6

Author(s):

Y. Hori ◽

K. Koga ◽

K. Sakiyama ◽

S. Kanemaru ◽

J. Itoh

Keyword(s):

Emission Current ◽

Field Emitter ◽

Field Emitter Arrays ◽

Tower Structure

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A Silicon Field Emitter Array Planar Vacuum FET Fabricated with Microfabrication Techniques

MRS Proceedings ◽

10.1557/proc-76-25 ◽

1986 ◽

Vol 76 ◽

Cited By ~ 9

Author(s):

Henry F. Gray ◽

G. J. Campisi

Keyword(s):

Electron Tunneling ◽

Field Emitter ◽

New Device ◽

New Class ◽

Field Emitter Arrays ◽

Field Emitters ◽

Circuit Integration ◽

Submicron Structures ◽

New Type ◽

Microfabrication Techniques

ABSTRACTIn this paper we will discuss a new type of field effect transistor, a vacuum FET, where the usual channel material is the vacuum rather than a semiconductor. This new device is based on Field Emitter Arrays (FEA) which are inherently submicron structures. That is, the field emitters themselves must have dimensions less that 0.1 micrometers in order to generate the high electrostatic fields necessary for electron tunneling, and the control gate (or extraction electrode) must be very close to the field emitter tip in order to generate these high fields with reasonable voltages. Consequently, this new “FET” is the first of a new class of vaccum electronic switching devices based on microfabrication techniques, and susceptible to circuit integration.

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