In Situ XPS Study of Interaction of Thin IVA, VA Metal Films with Native Oxide on Si Substrates

1999 ◽  
Vol 564 ◽  
Author(s):  
N. M. Sushkova ◽  
A. G. Akimov
Keyword(s):  
Metal Oxides ◽  
Room Temperature ◽  
Three Dimensional ◽  
Metal Films ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Si Substrates ◽  
In Situ Xps ◽  
Xps Study

AbstractPhase formation and change in morphology of Ti, V and Nb oxide films on (100)Si and (111)Si, with native oxide layer, have been studied by XPS in situ. The metal oxides were formed by the interaction at room temperature in UHV multistep deposited of Ti, V or Nb with native oxide. The formation of clean silicon regions during the growth of three-dimensional metal oxide islands is discussed. Differences observed in composition of Nb oxides on (100) Si and (111) Si are considered.

In Situ Spectroscopic Ellipsometry Study of the Oxide Etching and Surface Damaging Processes on Silicon Under Hydrogen Plasma

1999 ◽  
Vol 591 ◽  
Author(s):  
I.M. Vargas ◽  
J.Y. Manso ◽  
J.R. Guzmán ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Surface Damage ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Si Substrates ◽  
Oxide Etching

ABSTRACTWe employed in situ ellipsometry in the monitoring of surface damage to monocrystalline silicon (Si) substrates under hydrogen plasma conditions. These measurements were complemented with spectroscopic ellipsometry and Raman spectroscopy, in order to characterize the surface conditions. It was found that heating the Si substrate to 700°C in the presence of molecular hydrogen produces etching of the native oxide layer, which is typically 10 Å thick. When the already hot and bare silicon surface is submitted to hydrogen plasma, it deteriorates very fast, becoming rough and full of voids. Modeling of the spectroscopic ellipsometry data was used to obtain a quantitative physical picture of the surface damage, in terms of roughness layer t ickness and void fraction. The results indicate that by the time a thin film starts to grow on these silicon surfaces, like in the chemical vapor deposition of diamond, the roughness produced by the hydrogen plasma has already determined to a large extent the rough nature of the film to be grown.

In Situ Diagnostics of Vuv Laser Cvd of Semiconductor Interfaces by Ftir Spectroscopy and Spectroscopic Ellipsometry

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Barth ◽  
J. Knobloch ◽  
P. Hess
Keyword(s):  
Film Thickness ◽  
Bulk Material ◽  
Substrate Surface ◽  
Cluster Formation ◽  
Interface Layer ◽  
Native Oxide ◽  
Initial Growth ◽  
Difference Spectra ◽  
Si Substrates

ABSTRACTThe growth of high quality amorphous hydrogenated semiconductor films was explored with different in situ spectroscopic methods. Nucleation of ArF laser-induced CVD of a-Ge:H on different substrates was investigated by real time ellipsometry, whereas the F2 laser (157nm) deposition of a-Si:H was monitored by FTIR transmission spectroscopy. The ellipsometric studies reveal a significant influence of the substrate surface on the nucleation stage, which in fact determines the electronic and mechanical properties of the bulk material. Coalescence of initial clusters occurs at a thickness of 16 Å for atomically smooth hydrogen-terminated c-Si substrates, whereas on native oxide covered c-Si substrates the bulk volume void fractions are not reached until 35 Å film thickness. For the first time we present a series of IR transmission spectra with monolayer resolution of the initial growth of a-Si:H. Hereby the film thickness was measured simultaneously using a quartz crystal microbalance with corresponding sensitivity. The results give evidence for cluster formation with a coalescence radius of about 20 Å. Difference spectra calculated for layers at different depths with definite thickness reveal that the hydrogen-rich interface layer stays at the substrate surface and does not move with the surface of the growing film. The decrease of the Urbach energy switching from native oxide to H-terminated substrates suggests a strong influence of the interface morphology on the bulk material quality.

scholarly journals Reactivity of mesoporous carbon against water – An in-situ XPS study

Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 175-183 ◽  
Author(s):  
Sylvia Reiche ◽  
Raoul Blume ◽  
Xiao Chen Zhao ◽  
Dangsheng Su ◽  
Edward Kunkes ◽  
...  
Keyword(s):  
Mesoporous Carbon ◽  
In Situ Xps ◽  
Xps Study

In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

2015 ◽  
Vol 11 (5) ◽  
pp. 769-774 ◽  
Author(s):  
Antonio T. Lucero ◽  
Young-Chul Byun ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
In Situ Xps ◽  
Xps Study

In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7170-7177 ◽  
Author(s):  
Christian Ehlers ◽  
Stefan Kayser ◽  
David Uebel ◽  
Roman Bansen ◽  
Toni Markurt ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Layer Growth ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Uv Laser ◽  
Subsequent Layer

An in situ method for selectively heating a substrate by a laser pulse was modelled and investigated experimentally.

In-situ Measurement of GaAs Optical Constants and Surface Quality, as Functions of Temperature

1991 ◽  
Vol 222 ◽  
Author(s):  
Huade Yao ◽  
Paul G. Snyder
Keyword(s):  
Room Temperature ◽  
Optical Constants ◽  
Molecular Beam ◽  
Elevated Temperatures ◽  
Native Oxide ◽  
Time Data ◽  
Gaas Sample ◽  
Optical Thermometer ◽  
Surface Changes

ABSTRACTIn-situ spectroscopic ellipsometry (SE) was applied to monitor GaAs (100) surface changes induced at elevated temperatures inside an ultrahigh vacuum (UHV) chamber (<1×10−9 torr base pressure, without As overpressure). The real time data showed clearly the evolution of the native-oxide desorption at ∼577°C, on a molecular-beam-epitaxy (MBE)-grown GaAs (100) surface. In addition, surface degradation was found before and after the oxide desorption. A clean and smooth surface was obtained from an arsenic-capped, MBE-grown GaAs sample, after the arsenic coating was evaporated at ∼350 °C inside the UHV. Pseudodielectric functions <ε>GaAs, from 1.6 eV to 4.5 eV, were obtained through the SE measurements, from this oxide-free surface, at temperatures ranging from room temperature (RT) to ∼610 °C. These <ε> data were used as reference data to develop an algorithm for determining surface temperatures from in-situ SE measurements, thus turning the SE instrument into a sensitive optical thermometer.

scholarly journals In situ XPS study on atomic layer etching of Fe thin film using Cl2 and acetylacetone

2018 ◽  
Vol 36 (5) ◽  
pp. 051401 ◽  
Author(s):  
Xi Lin ◽  
Meixi Chen ◽  
Anderson Janotti ◽  
Robert Opila
Keyword(s):  
Thin Film ◽  
Atomic Layer ◽  
In Situ Xps ◽  
Xps Study ◽  
Atomic Layer Etching

In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N2

2000 ◽  
Author(s):  
Zhi Jin ◽  
Hiroshi Takahashi ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
In Situ Xps ◽  
Xps Study

“In situ” XPS study of band structures at Cu2O/TiO2 heterojunctions interface

2009 ◽  
Vol 603 (17) ◽  
pp. 2825-2834 ◽  
Author(s):  
Lei Huang ◽  
Feng Peng ◽  
Fumio S. Ohuchi
Keyword(s):  
Band Structures ◽  
In Situ Xps ◽  
Xps Study

Crystallographic Features of the A-Type and CE-Type Antiferromagnetic States in the Simple-Perovskite Manganite System Sr1-xNdxMnO3

2011 ◽  
Vol 409 ◽  
pp. 532-537
Author(s):  
Yusuke Onezawa ◽  
Yasuhide Inoue ◽  
Masazumi Arao ◽  
Yasumasa Koyama
Keyword(s):  
Room Temperature ◽  
Three Dimensional ◽  
Electronic System ◽  
Paramagnetic State ◽  
Heating Process ◽  
In Situ Observation ◽  
Perovskite Manganite ◽  
Transmission Electron ◽  
Highly Correlated

The electronic states of Sr1-xNdxMnO3 with the simple perovskite structure are characterized by a three-dimensional highly-correlated electronic system. To understand the detailed features of the A-and CE-type antiferromagnetic states in this system, their crystallographic features for x = 0.47, 0.48, and 0.50 have been investigated mainly by both x-ray powder diffraction and transmission electron microscopy. It was found at room temperature that the crystal structure for x = 0.47 was determined to have the monoclinic C2/m symmetry, while the orthorhombic Imma structure was confirmed for x = 0.48 and 0.50. The in-situ observation for x = 0.47 indicated that, in the heating process from room temperature, the C2/m-to-Imma transition occurred in the paramagnetic state, and that the A-type antiferromagnetic state appeared below about 200 K on cooling. In addition, the cooling from room temperature for x = 0.48 and 0.50 resulted in the direct transitions from the orthorhombic Imma state to the A-and CE-type antiferromagnetic states, respectively. Based on these features, we simply discussed the physical origin of the appearance of the paramagnetic state with the monoclinic symmetry for x = 0.47.

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