Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 583 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
Uttiya Chowdhury ◽  
Russell D. Dupuis ◽  
Chavva V. Reddy ◽  
Venkatesh Narayanamurti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Self Assembled ◽  
Metalorganic Chemical

AbstractWe report InP self-assembled quantum dots embedded in In0.51Al0.49P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary InxAlI−xP (x=˜0.7, ˜0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.

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