Robust skyrmion mediated reversal of ferromagnetic nanodots of 20 nm lateral dimension with high Ms and observable DMI

Implementation of skyrmion based energy efficient and high-density data storage devices requires aggressive scaling of skyrmion size. Ferrimagnetic materials are considered to be a suitable platform for this purpose due to their low saturation magnetization (i.e. smaller stray field). However, this method of lowering the saturation magnetization and scaling the lateral size of skyrmions is only applicable where the skyrmions have a smaller lateral dimension compared to the hosting film. Here, we show by performing rigorous micromagnetic simulation that the size of skyrmions, which have lateral dimension comparable to their hosting nanodot can be scaled by increasing saturation magnetization. Also, when the lateral dimension of nanodot is reduced and thereby the skyrmion confined in it is downscaled, there remains a challenge in forming a stable skyrmion with experimentally observed Dzyaloshinskii–Moriya interaction (DMI) values since this interaction has to facilitate higher canting per spin to complete a 360° rotation along the diameter. In our study, we found that skyrmions can be formed in 20 nm lateral dimension nanodots with high saturation magnetization (1.30–1.70 MA/m) and DMI values (~ 3 mJ/m2) that have been reported to date. This result could stimulate experiments on implementation of highly dense skyrmion devices. Additionally, using this, we show that voltage controlled magnetic anisotropy based switching mediated by an intermediate skyrmion state can be achieved in the soft layer of a ferromagnetic p-MTJ of lateral dimensions 20 nm with sub 1 fJ/bit energy in the presence of room temperature thermal noise with reasonable DMI ~ 3 mJ/m2.

Understanding the Lateral Dimension of Traffic: Measuring and Modeling Lane Discipline

There is growing interest in understanding the lateral dimension of traffic. This trend has been motivated by the detection of phenomena unexplained by traditional models and the emergence of new technologies. Previous attempts to address this dimension have focused on lane-changing and non-lane-based traffic. The literature on vehicles keeping their lanes has generally been limited to simple statistics on vehicle position while models assume vehicles stay perfectly centered. Previously the author developed a two-dimensional traffic model aiming to capture such behavior qualitatively. Still pending is a deeper, more accurate comprehension and modeling of the relationships between variables in both axes. The present paper is based on the Next Generation SIMulation (NGSIM) datasets. It was found that lateral position is highly dependent on the longitudinal position, a phenomenon consistent with data capture from multiple cameras. A methodology is proposed to alleviate this problem. It was also discovered that the standard deviation of lateral velocity grows with longitudinal velocity and that the average lateral position varies with longitudinal velocity by up to 8 cm, possibly reflecting greater caution in overtaking. Random walk models were proposed and calibrated to reproduce some of the characteristics measured. It was determined that drivers’ response is much more sensitive to the lateral velocity than to position. These results provide a basis for further advances in understanding the lateral dimension. It is hoped that such comprehension will facilitate the design of autonomous vehicle algorithms that are friendlier to both passengers and the occupants of surrounding vehicles.

Meningkatkan Pengetahuan Cara Senam Otak Untuk Konsentrasi Dan Daya Ingat Pada Anak Usia 5-12 Tahun

ABSTRAKSenam otak atau brain gym adalah serangkaian latihan gerakan tubuh yang sederhana. Gerakan itu dibuat untuk merangsang otak kiri dan kanan (dimensi lateralis), meringankan atau merelaksasikan belakang otak dan bagian depan otak (dimensi pemfokuskan), merangsang sistem yang terkait dengan perasaan/emosional, yakni otak tengah (limbik), serta otak besar (dimensi pemusatan) dan bermanfaat menigkatkan kemampuan berbahasa, konsentrasi, daya ingat meningkat, menjadi lebih bersemangat, lebih kreatif dan efesien, serta merasa lebih sehat. Dengan latihan senam otak, maka sangat berguna untuk meningkatkan keseimbangan dinamis selain itu juga dapat meningkatkan koordinasi dan konsentrasi yang baik. Tujuan penelitian ini adalah mengetahui bagaimanakah pengaruh senam otak terhadap konsentrasi dan daya ingat pada anak. Penelitian ini menggunakan metode presentasi powerpoint dan video senam otak pada klien dan keluarga. Hasil dari presentasi dan demonstrasi yang dilakukan adalah sebanyak 75 % peserta mengetahui dan dapat melakukan senam otak dan akan mempraktekkan pada eluarganya dirumah.Kata kunci : Senam Otak, KonsentrasiABSTRACTA brain gym or brain gym is a series of simple body exercises. The movement is made to stimulate the left and right brain (lateral dimension), lighten or relax the back of the brain and the front part of the brain (the focal dimension), stimulate systems related to feelings/emotions, namely the midbrain (limbic), and the cerebrum (concentration dimension ) and is useful for increasing language skills, concentration, increased memory, being more enthusiastic, more creative and efficient, and feeling healthier. With brain exercise exercises, it is very useful to improve dynamic balance besides that it can also improve good coordination and concentration. The purpose of this study was to determine how the influence of brain exercise on concentration and memory in children. This study uses a PowerPoint presentation method and video brain exercise for clients and families. The results of the presentations and demonstrations carried out were that as many as 75% of the participants knew and were able to do brain exercises and would practice them in their families at home. Keywords: Brain Exercise, Concentration

Neutrophils Defensively Degrade Graphene Oxide in a Lateral Dimension Dependent Manner through Two Distinct Myeloperoxidase Mediated Mechanisms

The boosting exploitation of graphene oxide (GO) increases exposure risk to human beings. However, as the first line defender, neutrophils’ mechanism of defensive behavior towards GO invasion remains unclear. Herein, we discover that neutrophils defensively degrade GO in a lateral dimension dependent manner. The micrometer-sized GO (mGO) induces NETosis by releasing neutrophil extracellular traps (NETs), while nanometer-sized GO (nGO) elicits neutrophil degranulation. The neutrophils’ defensive behavior is accompanied with generation of reactive oxygen species and activation of p-ERK and p-Akt kinases. We unveil that mGO-induced NETosis is NADPH oxidase (NOX)-independent, while nGO-triggered degranulation is NOX-dependent. Furthermore, myeloperoxidase (MPO) is identified to be a determinant mediator despite distinct neutrophil phenotypes in the biodegradation. Neutrophils release NETs comprising of MPO upon activated with mGO, while MPO is secreted via nGO induced-degranulation. Moreover, the binding energy between MPO and GO is calculated to be 69.8728 kJ·mol− 1, which indicates that electrostatic interactions mainly cause the spontaneous binding process in a spatial distance of 9.2 Å. Meanwhile, the central enzymatic biodegradation is found to occur at oxygenic active sites and defects on GO. Mass spectrometry analysis deciphers the degradation products are biocompatible molecules like flavonoids and polyphenols. Our study provides fundamental evidence and practical guidance for functional biomaterial development in sustainable nanotechnology, including but not limited to vaccine adjuvant and drug carrier.

Design and Simulation Analysis of NWFET for Digital Application

This chapter presents the design and simulation analysis nanowire-based FET (NWFET) for best possible Ig-Vgs characteristics. A NWFET is a device in which channel is wire-like structure with diameter or lateral dimension in nanometer (10-9 m) range. Performance analysis has been done for various design and process parameters variation to propose optimized parameter for best performance. Although a lot of focus has been put on homogenous Si based NWFETs, there has been a rising interest in III-V NWFETs. This is mainly due to the excellent carrier transport properties are provided by these materials. NWFETs have ability to suppress SCEs and are also good in suppressing OFF-current (IOFF), because of gate all around (GAA) configuration. Secondly, NWFETs have large ON-current (ION) due to quasi one-dimensional (1D) conduction of NWs, and as a result of low carrier scattering, conduction of NWs-based devices is very large.