GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth

AbstractWe report InP self-assembled quantum dots embedded in In0.51Al0.49P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary InxAlI−xP (x=˜0.7, ˜0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.

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Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Light Science & Applications ◽

10.1038/s41377-021-00593-8 ◽

2021 ◽

Vol 10 (1) ◽

Author(s):

Caroline E. Reilly ◽

Stacia Keller ◽

Shuji Nakamura ◽

Steven P. DenBaars

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Near Infrared ◽

Optoelectronic Devices ◽

Chemical Vapor ◽

Electromagnetic Spectrum ◽

Material System ◽

Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

MRS Proceedings ◽

10.1557/proc-102-77 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

P.-Y. Lu ◽

L. M. Williams ◽

C.-H. Wang ◽

S. N. G. Chu ◽

M. H. Ross

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Infrared Transmission ◽

Chemical Vapor Deposition Growth ◽

Deposition Processes ◽

Cdznte Substrates ◽

First Time ◽

Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

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Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-003-0247-3 ◽

2003 ◽

Vol 32 (1) ◽

pp. 18-22 ◽

Cited By ~ 2

Author(s):

J. H. Ryou ◽

R. D. Dupuis

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Self Assembled ◽

Metalorganic Chemical

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InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

Frontiers in Materials ◽

10.3389/fmats.2021.647936 ◽

2021 ◽

Vol 8 ◽

Author(s):

Caroline E. Reilly ◽

Stacia Keller ◽

Shuji Nakamura ◽

Steven P. DenBaars

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Recent Work ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Near Infrared ◽

Optoelectronic Devices ◽

Size Control ◽

Chemical Vapor ◽

Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

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