Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kinoshita ◽  
H. Hirayama ◽  
P. Riblet ◽  
M. Ainoya ◽  
A. Hirata ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Shift ◽  
Enhancement Ratio ◽  
Organic Vapor ◽  
Si Doping ◽  
Emission Enhancement ◽  
Metal Organic ◽  
Piezoelectric Field ◽  
Si Doped

AbstractPhotoluminescence (PL) enhancement due to the screening of piezoelectric field induced by Si-doping is systematically studied in GaN/AlGaN quantum wells (QWs) fabricated by metal organic vapor-phase-epitaxy (MOVPE). The PL enhancement ratio of QWs for Si-doped directly into the wells was much larger than that for doped only into the barrier layers. This result shows that the crystal quality of the quantum well is not so damaged by heavy Si-doping, which is different from the cases of GaAs or InP material systems. The PL intensity enhancement ratio was especially large for thick wells. The typical value of the enhancement ratio was 30 times for a 5 nm-thick single QW. The optimum Si-doping concentration was approximately 4×1018 cm-3. From the well width dependence of the PL enhancement ratio and PL peak shift under high excitation conditions, we determined that the dominant effect inducing the PL enhancement is screening of piezoelectric field in the QWs. These results indicate that Si-doping is very effective for the application of GaN/AlGaN QWs to optical devices.

scholarly journals Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field

2000 ◽  
Vol 5 (S1) ◽  
pp. 682-688 ◽  
Author(s):  
A. Kinoshita ◽  
H. Hirayama ◽  
P. Riblet ◽  
M. Ainoya ◽  
A. Hirata ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Shift ◽  
Enhancement Ratio ◽  
Organic Vapor ◽  
Si Doping ◽  
Emission Enhancement ◽  
Metal Organic ◽  
Piezoelectric Field ◽  
Si Doped

Photoluminescence (PL) enhancement due to the screening of piezoelectric field induced by Si-doping is systematically studied in GaN/AlGaN quantum wells (QWs) fabricated by metal organic vapor-phase-epitaxy (MOVPE). The PL enhancement ratio of QWs for Si-doped directly into the wells was much larger than that for doped only into the barrier layers. This result shows that the crystal quality of the quantum well is not so damaged by heavy Si-doping, which is different from the cases of GaAs or InP material systems. The PL intensity enhancement ratio was especially large for thick wells. The typical value of the enhancement ratio was 30 times for a 5 nm-thick single QW. The optimum Si-doping concentration was approximately 4×1018 cm−3. From the well width dependence of the PL enhancement ratio and PL peak shift under high excitation conditions, we determined that the dominant effect inducing the PL enhancement is screening of piezoelectric field in the QWs. These results indicate that Si-doping is very effective for the application of GaN/AlGaN QWs to optical devices.

Time-Resolved Photoluminescence Measurements of In0.15Ga0.85N/In0.015Ga0.985N Quantum Wells with Si-doped Barriers

2000 ◽  
Vol 639 ◽  
Author(s):  
Mee-Yi Ryu ◽  
Young Jun Yu ◽  
Phil Won Yu ◽  
Eun-joo Shin ◽  
Eunsoon Oh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Delay Time ◽  
Doping Concentration ◽  
Peak Shift ◽  
Stimulated Emission ◽  
Energy Separation ◽  
Time Resolved ◽  
Si Doping ◽  
Si Doped ◽  
Pl Emission

ABSTRACTA systematic study of photoluminescence (PL) and time-resolved PL spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si doping concentration in the barriers has been carried out. As the Si doping concentration increases, the PL emission intensity was increased and the PL peak energy was blueshifted. The energy separation between the spontaneous emission (SPE) and stimulated emission (SE) peaks decrease with increasing Si doping concentration. We also observed that the slow decay time τ2 in the QWs decreases with increasing Si doping concentration, from ∼ 130 ns for [Si] = 2 × 1018 cm−3 to ∼ 30 ns for [Si] = 1 × 1019 cm−3. The PL emission peak shifts to lower energies with delay time after a pulsed excitation and this shift decreases with increasing Si doping concentration. The increased recombination rate, the decrease of peak shift with delay time, and the reduced separation between the SPE and SE peaks with increasing Si doping concentration are attributed to the screening of piezoelectric field by carriers originated from Si doped barriers.

Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4330-4337 ◽  
Author(s):  
Akanksha Kapoor ◽  
Nan Guan ◽  
Martin Vallo ◽  
Agnes Messanvi ◽  
Lorenzo Mancini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Ingan Quantum Wells

Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6443-6447 ◽  
Author(s):  
Peter Hacke ◽  
Atsuyoshi Maekawa ◽  
Norikatsu Koide ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped

Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes

2007 ◽  
Vol 31 ◽  
pp. 17-19
Author(s):  
Zong You Yin ◽  
Xiao Hong Tang ◽  
Ji Xuan Zhang ◽  
Deny Sentosa ◽  
Jing Hua Teng ◽  
...  
Keyword(s):  
Defect Density ◽  
Theory Model ◽  
Crystal Quality ◽  
Free Standing ◽  
Organic Vapor ◽  
Growth Modes ◽  
Layer Deposition ◽  
Metal Organic ◽  
Size Dispersion

Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

2011 ◽  
Vol 98 (23) ◽  
pp. 233107 ◽  
Author(s):  
A. De Luna Bugallo ◽  
L. Rigutti ◽  
G. Jacopin ◽  
F. H. Julien ◽  
C. Durand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Wire ◽  
Organic Vapor ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Metal
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