Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
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AbstractGaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.
2000 ◽
Vol 5
(S1)
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pp. 230-237
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2011 ◽
Vol 23
(12)
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pp. 774-776
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2011 ◽
Vol 315
(1)
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pp. 1-4
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