Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O'Brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractDialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

2018 ◽  
Vol 47 (8) ◽  
pp. 2719-2726 ◽  
Author(s):  
Zahra Ali ◽  
Nathaniel E. Richey ◽  
Duane C. Bock ◽  
Khalil A. Abboud ◽  
Javeed Akhtar ◽  
...  

Readily available N,N-disubstituted-N′-acylthiourea complexes are single source precursors for aerosol assisted chemical vapor deposition of metal sulfide thin films.


2014 ◽  
Vol 26 (10) ◽  
pp. 3348-3348 ◽  
Author(s):  
Karthik Ramasamy ◽  
Vladimir L. Kuznetsov ◽  
Kandasamy Gopal ◽  
Mohammad A. Malik ◽  
James Raftery ◽  
...  

2013 ◽  
Vol 25 (3) ◽  
pp. 266-276 ◽  
Author(s):  
Karthik Ramasamy ◽  
Vladimir L. Kuznetsov ◽  
Kandasamy Gopal ◽  
Mohammad A. Malik ◽  
James Raftery ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2019 ◽  
Vol 58 (4) ◽  
pp. 2784-2797 ◽  
Author(s):  
Hannah S. I. Sullivan ◽  
James D. Parish ◽  
Prem Thongchai ◽  
Gabriele Kociok-Köhn ◽  
Michael S. Hill ◽  
...  

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