MOCVD growth of GaN on flat and misoriented A-plane sapphire substrates

2001 ◽  
Vol 680 ◽  
Author(s):  
T. Someya ◽  
K. Hoshino ◽  
Y. Arakawa
Keyword(s):  
Surface Morphology ◽  
Vapor Deposition ◽  
Smooth Surface ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Misorientation Angles ◽  
Metalorganic Chemical

ABSTRACTWe have grown high-quality GaN with smooth surface morphology on vicinal a-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The misorientation angles of vicinal a-plane sapphire substrates were changed systematically from 0° to 0.75°. Surface morphology and crystalline qualities are found to be very sensitive to misorientation angles of a-plane sapphire substrates and the misorientation angle was optimized to be 0.25°.

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

2008 ◽  
Vol 310 (23) ◽  
pp. 5166-5169 ◽  
Author(s):  
Jianping Liu ◽  
Jae-Hyun Ryou ◽  
Zachary Lochner ◽  
Jae Limb ◽  
Dongwon Yoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Morphology Control ◽  
Metalorganic Chemical ◽  
Green Leds

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

2011 ◽  
Vol 32 (9) ◽  
pp. 896-901 ◽  
Author(s):  
陈耀 CHEN Yao ◽  
王文新 WANG Wen-xin ◽  
黎艳 LI Yan ◽  
江洋 JIANG Yang ◽  
徐培强 XU Pei-qiang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Metalorganic Chemical
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