Shape Transition in Self-Organized InAs/InP Nanostructures

2001 ◽  
Vol 696 ◽  
Author(s):  
H.R. Gutiérrez ◽  
M.A. Cotta ◽  
M.M.G. de Carvalho
Keyword(s):  
Growth Temperature ◽  
Driving Force ◽  
Anisotropic Diffusion ◽  
Chemical Potential ◽  
Quantum Wires ◽  
Shape Transition ◽  
Self Organized ◽  
Self Assembled ◽  
Inp Substrates ◽  
Stable Shape

AbstractIn this letter we report the transition from self-assembled InAs quantum-wires to quantumdots grown on (100) InP substrates. This transition is obtained when the wires are annealed at the growth temperature. Our results suggest that the quantum-wires are a metastable shape originated from the anisotropic diffusion over the InP buffer layer during the formation of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the annealing. The driving force for the transition is associated with variations in the elastic energy and hence in the chemical potential produced by height fluctuations along the wire. The regions along the wires with no height variations are more stable allowing the formation of complex, self-assembled nanostructures such as dots interconnected by wires.

Shape Transition in Self-Organized InAs/InP Nanostructures

2001 ◽  
Vol 707 ◽  
Author(s):  
H.R. Gutiérrez ◽  
M.A. Cotta ◽  
M.M.G. de Carvalho
Keyword(s):  
Quantum Dots ◽  
Driving Force ◽  
Anisotropic Diffusion ◽  
Chemical Potential ◽  
Quantum Wires ◽  
Shape Transition ◽  
Self Organized ◽  
Self Assembled ◽  
Inp Substrates ◽  
Stable Shape

ABSTRACTIn this letter we report the transition from self-assembled InAs quantum-wires to quantum-dots grown on (100) InP substrates. This transition is obtained when the wires are annealed at the growth temperature. Our results suggest that the quantum-wires are a metastable shape originated from the anisotropic diffusion over the InP buffer layer during the formation of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the annealing. The driving force for the transition is associated with variations in the elastic energy and hence in the chemical potential produced by height fluctuations along the wire. The regions along the wires with no height variations are more stable allowing the formation of complex, self-assembled nanostructures such as dots interconnected by wires.

Dynamics of Self-Organized and Self-Assembled Structures

2009 ◽  
Author(s):  
Rashmi C. Desai ◽  
Raymond Kapral
Keyword(s):  
Self Organized ◽  
Self Assembled

Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)

2005 ◽  
Vol 284 (3-4) ◽  
pp. 306-312 ◽  
Author(s):  
Yuan-Li Wang ◽  
Yong-Hai Chen ◽  
Ju Wu ◽  
Wen Lei ◽  
Zhan-Guo Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Structural And Optical Properties ◽  
Self Assembled

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

Erratum to “Self-assembled InAs quantum wires on InP (0 0 1)” [J. Crystal Growth 219 (2000) 180–183]

2000 ◽  
Vol 219 (4) ◽  
pp. 495 ◽  
Author(s):  
J Wu ◽  
Y.P Zeng ◽  
Z.Z Sun ◽  
F Lin ◽  
B Xu ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Quantum Wires ◽  
Self Assembled

The Properties of a Na-Doped Twist Boundary in SrTiO3 from First Principles

2002 ◽  
Vol 751 ◽  
Author(s):  
Roope K. Astala ◽  
Paul D. Bristowe
Keyword(s):  
Electronic Structure ◽  
Grain Boundary ◽  
Plane Wave ◽  
First Principles ◽  
Driving Force ◽  
Chemical Potential ◽  
Twist Boundary ◽  
Atomic Displacements ◽  
Formation Energies ◽  
Oxygen Chemical Potential

ABSTRACTThe segregation of Nasr impurities to a Σ = 5 [001] twist boundary in SrTiO3 is studied using DFT-based plane-wave pseudopotential techniques. The formation energies of the impurities are calculated as a function of oxygen chemical potential and electron chemical potential. The results indicate a strong driving force for segregation to the boundary and that the Na impurities exhibit acceptor-like behaviour. The atomic displacements caused by the impurities are small both in the bulk and at the grain boundary. Based on the results a model is suggested in which Nasr segregation is driven by soft relaxation of the electronic structure.

Vertically stacking self-assembled quantum wires

2002 ◽  
Vol 81 (6) ◽  
pp. 1107-1109 ◽  
Author(s):  
Xiaodong Mu ◽  
Yujie J. Ding ◽  
Haeyeon Yang ◽  
Gregory J. Salamo
Keyword(s):  
Quantum Wires ◽  
Self Assembled

Strain distributions and electronic subband energies of self-assembled CdTe quantum wires grown on ZnTe buffer layers

2007 ◽  
Vol 102 (3) ◽  
pp. 033521 ◽  
Author(s):  
J. T. Woo ◽  
S. H. Song ◽  
I. Lee ◽  
T. W. Kim ◽  
K. H. Yoo ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Buffer Layers ◽  
Self Assembled
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