The Materials Issues and Applications of Amorphous Silicon Thin Film Transistors

1986 ◽  
Vol 70 ◽  
Author(s):  
M. J. Thompson
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Current Status ◽  
Operating Voltage ◽  
Silicon Thin Film ◽  
Input And Output

ABSTRACTRecently considerable interest has been generated in the application of thin film transistor (TFT) technology in electronic input and output devices. Amorphous silicon (a-Si:H) has made a major impact in these applications because of the relative ease with which the material can be economically manufactured over large areas. This paper will review in particular the current status of a-Si:H TFTs in liquid crystal display and printer applications, in addition to sensor/TFT arrays for page width input scanner document readers. There are a number of materials issues which limit the performance of these devices. In addition, there are some technological issues which influence the yield of the processes used to fabricate these electronic devices over large areas. Some novel new devices have been recently developed which dramatically increase the operating voltage of a- Si:H TFTs. Other new structures have been proposed and demonstrated for increasing the current and speed of these devices.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering

1996 ◽  
Vol 424 ◽  
Author(s):  
C. S. McCormick ◽  
C. E. Webe ◽  
J. R. Abelson
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Silicon Thin Film ◽  
Dc Reactive Magnetron Sputtering ◽  
Silicon Based

AbstractWe deposit hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125°C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/Ioff ratio of 5 × 105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

scholarly journals Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics

2020 ◽  
Vol 9 (5) ◽  
pp. 270-273
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Simulation Software ◽  
Active Components ◽  
Large Area ◽  
Silicon Thin Film ◽  
Flexible Display ◽  
Active Matrix

The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

ELASTOMERIC INTERCONNECTS

2006 ◽  
Vol 16 (01) ◽  
pp. 397-407 ◽  
Author(s):  
Stéphanie P. Lacour ◽  
Joyelle Jones ◽  
Sigurd Wagner ◽  
Teng Li ◽  
Z. Suo
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Electrical Resistance ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Gold Films ◽  
Silicon Thin Film ◽  
Electrical Failure ◽  
Electrically Conducting ◽  
Silicone Membranes

Elastomeric interconnects made of patterned thin gold films on silicone membranes, can be reversibly bent, uniaxially or radially stretched while remaining electrically conducting. Such interconnects can be stretched to double their length, cycled 1,000 times without electrical failure. While the electrical resistance may increase threefold upon stretching, the resistance values still remain ~1,000 times below the typical input impedance of amorphous silicon thin film transistors. Therefore the stretchable gold films can function as interconnects for power and signal to a fully elastic thin film transistor inverter.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process
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