Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB07 ◽  
Author(s):  
Ming-Chin Hung ◽  
Hsia-Tsai Hsiao ◽  
Wei-Ting Lin ◽  
Chun-Hao Tu ◽  
Jiun-Jye Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Process Flow ◽  
Active Matrix ◽  
Matrix Liquid

Large Scale and Large Area Amorphous Silicon Thin Film Transistor Arrays for Active Matrix Liquid Crystal Displays

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Miki ◽  
S. Kawamoto ◽  
T. Horikawa ◽  
T. Maejima ◽  
H. Sakamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Etching Rate ◽  
Thin Film Transistor ◽  
Liquid Crystal Displays ◽  
Silicon Nitride Film ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Matrix Liquid

AbstractThe preparation and properties of hydrogenated amorphous silicon thin film transistor arrays for active matrix liquid crystal displays are reported. The effect of amorphous silicon film preparation conditions on the field effect mobility of thin film transistors was investigated. The dry etching rate of silicon nitride film was studied.The thin film transistor arrays have 408 ˜ 640 transistors on the first version and 450 ˜ 640 ˜ 3 transistors on the second version. The liquid crystal panel fabricated using the first version arrays showed good characteristics.

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