High Throughput Optimization of Y-Type Magnetoplumbite Epitaxial thin Film Growth by Combinatorial Pulsed Laser Deposition Technique

2001 ◽  
Vol 700 ◽  
Author(s):  
I. Ohkubo ◽  
Y. Matsumoto ◽  
M. Ohtani ◽  
T. Hasegawa ◽  
K. Ueno ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Film Growth ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Throughput Optimization ◽  
Tem Analysis ◽  
First Time

AbstractThin films of Y-type magnetoplumbite (Ba2Co2Fe12O22: Co2Y) with such a huge unit cell length as 43.5 Å has been successfully fabricated for the first time with the aid of combinatorial optimization of pulsed laser deposition process. Planning a thickness gradient CoO buffer layer on MgAl2O4(111) substrate was very effective for prevent the phase separation of Co deficient impurity (BaFe2O4) to reside in the formation of desired Co2Y phase.From the TEM analysis, the CoO buffer layer of optimum thickness was incorporated into the Co2Y film to make theinterface with the make an atomically sharp.

Incongruent pulsed laser deposition strategy for thin film growth of Ca3Co4O9 thermoelectric compound

2019 ◽  
Vol 45 (10) ◽  
pp. 13138-13143 ◽  
Author(s):  
Haiyang Hu ◽  
Fei Shao ◽  
Jikun Chen ◽  
Max Döbeli ◽  
Qingfeng Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition

Thin film growth by inverse pulsed laser deposition

2005 ◽  
Vol 484 (1-2) ◽  
pp. 165-169 ◽  
Author(s):  
Tamás Szörényi ◽  
Zsolt Geretovszky
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition

Controlled deposition of wedge-shaped profiles for thin (∼10Å) layers by pulsed laser deposition

2003 ◽  
Vol 804 ◽  
Author(s):  
H.M. Christen ◽  
I. Ohkubo
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Sample Sizes ◽  
Basic Principles ◽  
Controlled Deposition ◽  
Thin Wedge

ABSTRACTA method yielding precisely controlled thickness profiles in thin-film growth is necessary for continuous compositional spread techniques. While multiple approaches have been introduced and successfully tested, some specific applications require the use of very thin “wedge”-type profiles (∼10 Å at the thickest point), while at the same time yielding lateral sample sizes of several centimeters. Here we introduce the basic principles of a pulsed-laser deposition based approach utilizing the translation of the substrate behind a slit-shaped aperture and demonstrate by simple calculations that this method can satisfy these requirements.

Effect of Ga Re-evaporation on AlxGa1-xN Thin Film Growth by Dual-Beam Pulsed Laser Deposition Method in N2Ambient

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2856-2857 ◽  
Author(s):  
Yoichiro Masuyama ◽  
Shinsuke Komatsu ◽  
Masaya Kiso ◽  
Kouhei Mizuno ◽  
Takeshi Kobayashi
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Deposition Method ◽  
Dual Beam

scholarly journals High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

2018 ◽  
Vol 31 (5) ◽  
pp. 055017 ◽  
Author(s):  
A Torgovkin ◽  
S Chaudhuri ◽  
A Ruhtinas ◽  
M Lahtinen ◽  
T Sajavaara ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
High Quality

Low Temperature Growth of Oriented Gallium Nitride using Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Robert Leuchtner ◽  
W. Brock ◽  
Y. Li ◽  
L. Hristakos
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Film Deposition ◽  
Laser Deposition ◽  
Metal Target ◽  
X Ray

ABSTRACTOriented GaN has been successfully grown at low substrate temperatures (∼480°C) on a- and r-planes of sapphire, using the pulsed laser deposition process. We have examined the effects of several deposition parameters on film growth, including substrate temperature (∼50–500°C), ambient pressure (1×10−3 – 10 torr of NH3), and target material (Ga or GaN). The film deposition rate was typically ∼3–4 μm/hr. Film characterization was performed using x-ray diffraction (XRD), optical microscopy, x-ray photoelectron spectrometry (XPS), and atomic force microscopy (AFM). In the case of the Ga metal target, a plasma (∼500V) between the target and substrate was necessary to promote formation of the GaN phase. The ammonia ambient enhanced the nitrogen content in the films compared to vacuum deposition. In general, the GaN target yielded better quality films (smaller rocking curve widths and smoother film morphology) compared to the Ga metal target. These results suggest that pulsed laser deposition is a promising approach to fabricating high quality films of this potentially important semiconducting material.

Thin-film growth of (110) rutile TiO2on (100) Ge substrate by pulsed laser deposition

2016 ◽  
Vol 55 (6S1) ◽  
pp. 06GG06
Author(s):  
Yoshihisa Suzuki ◽  
Takahiro Nagata ◽  
Yoshiyuki Yamashita ◽  
Toshihide Nabatame ◽  
Atsushi Ogura ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition
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