Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

Attractive Potential ◽

High Activation ◽

Shallow Junction ◽

Enhanced Diffusion ◽

Diffusion Effects ◽

Junction Formation ◽

Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

MRS Proceedings ◽

10.1557/proc-532-13 ◽

1998 ◽

Vol 532 ◽

Cited By ~ 1

Author(s):

M. Kase ◽

Y Kikuchi ◽

H. Niwa ◽

T. Kimura

Keyword(s):

Junction Depth ◽

Shallow Junction ◽

Enhanced Diffusion ◽

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

Applied Physics Letters ◽

10.1063/1.118674 ◽

1997 ◽

Vol 70 (13) ◽

pp. 1700-1702 ◽

Cited By ~ 15

Author(s):

R. Singh ◽

K. C. Cherukuri ◽

L. Vedula ◽

A. Rohatgi ◽

S. Narayanan

Keyword(s):

Low Temperature ◽

Thermal Processing ◽

Vacuum Ultraviolet ◽

Shallow Junction ◽

Junction Formation ◽

Ultraviolet Photons

Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion

10.7567/ssdm.2000.a-7-2 ◽

2000 ◽

Author(s):

K. Ohuchi ◽

K. Adachi ◽

A. Murakoshi ◽

A. Hokazono ◽

T. Kanemura ◽

...

Keyword(s):

Shallow Junction ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

MRS Proceedings ◽

10.1557/proc-74-379 ◽

1986 ◽

Vol 74 ◽

Cited By ~ 6

Author(s):

S. J. Pennycook ◽

R. J. Culbertson

Keyword(s):

Heat Treatment ◽

Point Defects ◽

Diffusion Coefficients ◽

Thermal Processing ◽

Temperature Dependent ◽

Enhanced Diffusion ◽

Thermally Activated ◽

And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

Rapid thermal processing, an integral part of shallow junction formation

10.1016/0168-583x(89)90293-0 ◽

1989 ◽

Vol 37-38 ◽

pp. 760-765 ◽

Cited By ~ 10

Author(s):

T.O. Sedgwick

Keyword(s):

Thermal Processing ◽

Shallow Junction ◽

Transient-enhanced diffusion in shallow-junction formation

Journal of Electronic Materials ◽

10.1007/s11664-002-0034-6 ◽

2002 ◽

Vol 31 (10) ◽

pp. 999-1003 ◽

Cited By ~ 2

Author(s):

A. T. Fiory ◽

S. G. Chawda ◽

S. Madishetty ◽

V. R. Mehta ◽

N. M. Ravindra ◽

...

Keyword(s):

Shallow Junction ◽

Enhanced Diffusion ◽

2005 13th International Conference on Advanced Thermal Processing of Semiconductors ◽

Plasma Doping and Subsequent Rapid Thermal Processing for Ultra Shallow Junction Formation

10.1109/rtp.2005.1613683 ◽

2006 ◽

Author(s):

B. Mizuno ◽

Y. Sasaki ◽

Cheun-Guo Jin ◽

H. Tamura ◽

K. Okashita ◽

...

Keyword(s):

Thermal Processing ◽

Shallow Junction ◽

Plasma Doping ◽

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

A novel transient enhanced diffusion model of phosphorus during shallow junction formation

10.1109/sispad.1996.865289 ◽

2005 ◽

Author(s):

H. Sato ◽

K. Aoyama ◽

K. Tsuneno ◽

H. Masuda

Keyword(s):

Diffusion Model ◽

Shallow Junction ◽

Enhanced Diffusion ◽

Millisecond Microwave Annealing: Reaching the 32 Nm Node

MRS Proceedings ◽

10.1557/proc-810-c5.3 ◽

2004 ◽

Vol 810 ◽

Author(s):

Keith Thompson ◽

John H. Booske ◽

R.L. Ives ◽

John Lohr ◽

Yurii A. Gorelov ◽

...

Keyword(s):

Thermal Processing ◽

Thermal Treatments ◽

Next Generation ◽

Shallow Junction ◽

Microwave Annealing ◽

Microwave Reactor ◽

Junction Formation ◽

Processing Techniques

ABSTRACTThe next generation of Si devices requires thermal treatments of 1200°C – 1300°C but can only withstand temperatures above 800°C for a few milliseconds. Current rapid thermal processing techniques cannot meet these requirements. We have designed, constructed, and tested a microwave reactor that heats Si to 1300°C in only a few milliseconds and cools the wafer at a rate that exceeds a million degrees per second. Applying millisecond microwave annealing to ultra-shallow junction formation in advanced Si devices shows that this technique meets or exceeds the thermal processing requirements for the next several generations of Si devices.

Rapid Thermal Processing (RTP) of Shallow Silicon Junctions

MRS Proceedings ◽

10.1557/proc-45-7 ◽

1985 ◽

Vol 45 ◽

Cited By ~ 6

Author(s):

T.E. Seidel

Keyword(s):

Thermal Processing ◽

High Dose ◽

Atom Diffusion ◽

Enhanced Diffusion ◽

Ion Channeling ◽

High Temperature Short Time ◽

Long Time ◽

Residual Damage ◽

Short Time

ABSTRACTRapid Thermal Processing (RTP) is used to study shallow junction formation for high dose implanted silicon. The residual damage from As damage is efficiently removed using high temperature-short time anneals (1100°C - few seconds), while limited arsenic atom diffusion is obtained. The diffusion properties are also characterized by concentration enhanced diffusion at higher doping. The higher doping is metastable, with reversible changes in resistivity observed for sequential 1100°C-800°C-1100°C-800°C thermal cycles. RTP gives shallower defect free As junctions than standard long time anneals. Boron junctions are limited by the depth extension of a large ion-channeling-tail which is shown to undergo local enhanced diffusion. The approaches to form shallow p+ junctions without channel tails are discussed. A summary of ion damage studies is made. Some generalizations for determining an RTP advantage or disadvantage are made, based on activation energy differences of effects.