Low-Voltage Organic Thin Film Transistors on Flexible Plastic Substrates with Anodized Ta2O5 Gate Insulators
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ABSTRACTOrganic thin film transistors (OTFTs) that operate at low voltage were fabricated using a tantalum oxide (Ta2O5) gate insulator on plastic substrates. The Ta2O5 insulator was prepared by anodizing a Ta gate electrode. The high dielectric constant of the Ta2O5 enabled the OTFTs to operate at a lower voltage than those of previous devices. The OTFTs exhibited a high field-effect mobility of 0.35 - 0.51 cm2/Vs, and a current on/off ratio of 105-106 at gate voltages of less than 5 V. The threshold voltage of -1.1 V and the subthreshold slope of 0.2 V/decade were the best among those reported to date. We also demonstrated operation of a phosphorescent organic light-emitting device (OLED) with the OTFT operating at a low voltage.
2013 ◽
Vol 34
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pp. 307-309
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2015 ◽
Vol 24
(3)
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pp. 165-168
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2014 ◽
Vol 15
(11)
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pp. 3173-3182
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2010 ◽
Vol 31
(12)
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pp. 124007
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2018 ◽
Vol 10
(38)
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pp. 32462-32470
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