Reactions of Bare Silicon Cluster Ions: Prototypical Deposition and Etching Versus Cluster Size

1986 ◽  
Vol 75 ◽  
Author(s):  
M. L. Mandich ◽  
W. D. Reents ◽  
V. E. Bondybey

AbstractPrototypical silicon deposition and etching reactions have been observed in gas phase reactions of size selected bare silicon cluster ions at room temperature. Laser evaporation of bulk silicon just outside the ion cell of a Fourier transform mass spectrometer produces abundant positive and negative silicon cluster ions. These cluster ions are trapped inside the cell for subsequent study of their bimolecular reactivity with various neutral reagents. Deposition type reactions occur with silanes, e.g. CH3SiH3, and increase the number of silicon atoms in the cluster. Etching reactions occur in reactions with certain halogen or oxygen containing reagents. For example, NO2 and XeF2 react to destroy the silicon clusters by sequential loss of a silicon atom. Overall the reactivity of small silicon cluster ions correlates with chemistry which occurs at two distinct types of dangling bonds in the clusters: either a lone pair of electrons or a single unpaired electron.

1981 ◽  
Vol 59 (11) ◽  
pp. 1615-1621 ◽  
Author(s):  
Scott D. Tanner ◽  
Gervase I. Mackay ◽  
Diethard K. Bohme

Flowing afterglow measurements are reported which provide rate constants and product identifications at 298 ± 2 K for the gas-phase reactions of OH− with CH3OH, C2H5OH, CH3OCH3, CH2O, CH3CHO, CH3COCH3, CH2CO, HCOOH, HCOOCH3, CH2=C=CH2, CH3—C≡CH, and C6H5CH3. The main channels observed were proton transfer and solvation of the OH−. Hydration with one molecule of H2O was observed either to reduce the rate slightly and lead to products which are the hydrated analogues of the "nude" reaction, or to stop the reaction completely, k ≤ 10−12 cm3 molecule−1 s−1. The reaction of OH−•H2O with CH3—C≡CH showed an uncertain intermediate behaviour.


1996 ◽  
Vol 03 (01) ◽  
pp. 807-811 ◽  
Author(s):  
M. EHBRECHT ◽  
H. FERKEL ◽  
V.V. SMIRNOV ◽  
O. STELMAKH ◽  
W. ZHANG ◽  
...  

A newly developed technique is employed for the production of carbon and silicon cluster beams starting from gaseous compounds. It is based on the CO 2-laser-induced decomposition of molecular gases containing carbon and silicon, such as CO 2H2 and SiH 4, in a flow reactor. In order to decompose acetylene, SF 6 is used as a sensitizer. By introducing a skimmer into the reaction zone, the generated silicon and carbon clusters are transferred to free molecular flow and analyzed with a time-of-flight mass spectrometer. It is shown that the technique can be efficiently employed to produce fullerenes C 60 and C 70 and, in the case of silicon, ultrapure nanosized particles of up to 3-nm diameter.


2006 ◽  
Vol 249-250 ◽  
pp. 385-391 ◽  
Author(s):  
Voislav Blagojevic ◽  
Eric Flaim ◽  
Michael J.Y. Jarvis ◽  
Gregory K. Koyanagi ◽  
Diethard K. Bohme

2018 ◽  
Vol 25 (1) ◽  
pp. 82-85 ◽  
Author(s):  
Zhe-Chen Wang ◽  
Ya-Ke Li ◽  
Sheng-Gui He ◽  
Veronica M Bierbaum

The strategy of synthesizing diazeniumdiolates (X–N(O)=NO−) through the coexistence of nitric oxide and alkoxides (RO−) was introduced by Wilhelm Traube 120 years ago. Today, despite the wide use of diazeniumdiolate derivatives to release nitric oxide in the treatment of cancer, the first step of the reaction mechanism for diazeniumdiolate synthesis remains a mystery and is thought to be complex. We have studied the gas-phase reactions of nitric oxide with alkoxides at room temperature. An electron-coupled hydrogen transfer is observed, and the radical anion HNO− is the only ionic product in these reactions. HNO− can further react with nitric oxide to form N2O and HO−.


2004 ◽  
Vol 108 (47) ◽  
pp. 10434-10440 ◽  
Author(s):  
Tetsu Hanmura ◽  
Masahiko Ichihashi ◽  
Takashi Monoi ◽  
Kazuo Matsuura ◽  
Tamotsu Kondow

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