Post-transit Analysis of Transient Photocurrents from High-Deposition-Rate a-Si:H Samples

2003 ◽  
Vol 762 ◽  
Author(s):  
Monica Brinza ◽  
W.M.M. Kessel ◽  
Arno H.M Smets ◽  
M.C.M van de Sanden ◽  
Guy J. Adriaenssens
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Density Of States ◽  
Thermal Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Flight Experiment ◽  
Plasma Technique ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractAn interpretation of post-transit photocurrents in a time-of-flight experiment in terms of the underlying density of localized gap states in the sample is presented for the case of hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. It is pointed out that part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.

Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

1984 ◽  
Vol 23 (Part 2, No. 2) ◽  
pp. L81-L82 ◽  
Author(s):  
Toshihiko Hamasaki ◽  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Masataka Hirose ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous

Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions

1985 ◽  
Vol 24 (Part 2, No. 6) ◽  
pp. L428-L430 ◽  
Author(s):  
Isao Sakata ◽  
Satoru Okazaki ◽  
Mitsuyuki Yamanaka ◽  
Yutaka Hayashi
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous

Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique

1985 ◽  
Vol 24 (Part 1, No. 7) ◽  
pp. 795-799 ◽  
Author(s):  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Toshio Nakashita ◽  
Takeshi Imura ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Annealing Effect ◽  
Silicon Films ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Films by the Pyrolysis of Disilane(1)

1985 ◽  
Vol 49 ◽  
Author(s):  
T. L. Chu ◽  
Shirley S. Chu ◽  
S. T. Ang ◽  
D. H. Lo ◽  
A. Duong ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Conductivity Ratio ◽  
Helium Flow ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractThe thermal decomposition of disilane in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous silicon (a-Si:H) films on the surface of several substrates at 450°-500°C. The concentration of disilane in the reaction mixture has been found to affect strongly the deposition rate and the photoconductivity of a-Si:H films. The AMI conductivity of a-Si:H films increases with increasing disilane concentration and approaches lO−5(ohm-cm)−l at disilane concentrations higher than about 4%, and the conductivity ratio is about lO5. The density of gap states in CVD a-Si:H films have been determined by the photothermal deflection spectroscopy, capacitancetemperature, capacitance-frequency, and space-charged-limited current measurements with similar results.

scholarly journals A Study of Electronic Defects in Hydrogenated Amorphous Silicon Prepared by the Expanding Thermal Plasma Technique

2003 ◽  
Vol 762 ◽  
Author(s):  
Steve Reynolds ◽  
Charlie Main ◽  
Ivica Zrinscak ◽  
Zdravka Aneva ◽  
Diana Nesheva
Keyword(s):  
Amorphous Silicon ◽  
Thermal Plasma ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Band Tail ◽  
Plasma Technique ◽  
Transient Photoconductivity ◽  
Electronic Defects ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

AbstractThe electronic properties of amorphous silicon films prepared by the expanding thermal plasma technique have been studied using steady-state and transient photoconductivity measurements. It is found that films deposited at a substrate temperature of 400°C have a conduction band tail slope of 29 meV, deep defect density of order 3×1016 cm-3, an Urbach tail slope of 65 meV, defect absorption of 5-10 cm-1, and a mobility-lifetime product of 1.3×10-7 cm2 V-1. Aslight increase in defect density and reduction in mobility-lifetime product is observed on moderate light-soaking. The overall optoelectronic quality is somewhat poorer than commercial PECVD material, but there is scope for improvement as deposition conditions are further optimised.

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