Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique

1985 ◽  
Vol 24 (Part 1, No. 7) ◽  
pp. 795-799 ◽  
Author(s):  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Toshio Nakashita ◽  
Takeshi Imura ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Annealing Effect ◽  
Silicon Films ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous

Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

1984 ◽  
Vol 23 (Part 2, No. 2) ◽  
pp. L81-L82 ◽  
Author(s):  
Toshihiko Hamasaki ◽  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Masataka Hirose ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous

Post-transit Analysis of Transient Photocurrents from High-Deposition-Rate a-Si:H Samples

2003 ◽  
Vol 762 ◽  
Author(s):  
Monica Brinza ◽  
W.M.M. Kessel ◽  
Arno H.M Smets ◽  
M.C.M van de Sanden ◽  
Guy J. Adriaenssens
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Density Of States ◽  
Thermal Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Flight Experiment ◽  
Plasma Technique ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractAn interpretation of post-transit photocurrents in a time-of-flight experiment in terms of the underlying density of localized gap states in the sample is presented for the case of hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. It is pointed out that part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.

Sign in / Sign up

Export Citation Format

Share Document