Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

1984 ◽  
Vol 23 (Part 2, No. 2) ◽  
pp. L81-L82 ◽  
Author(s):  
Toshihiko Hamasaki ◽  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Masataka Hirose ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous

Post-transit Analysis of Transient Photocurrents from High-Deposition-Rate a-Si:H Samples

2003 ◽  
Vol 762 ◽  
Author(s):  
Monica Brinza ◽  
W.M.M. Kessel ◽  
Arno H.M Smets ◽  
M.C.M van de Sanden ◽  
Guy J. Adriaenssens
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Density Of States ◽  
Thermal Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Flight Experiment ◽  
Plasma Technique ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractAn interpretation of post-transit photocurrents in a time-of-flight experiment in terms of the underlying density of localized gap states in the sample is presented for the case of hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. It is pointed out that part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.

Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

1989 ◽  
Vol 149 ◽  
Author(s):  
Takaaki Kamimura ◽  
Hidetoshi Nozaki ◽  
Naoshi Sakuma ◽  
Mitsuo Nakajima ◽  
Hiroshi Ito
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Gas Phase Reactions ◽  
Bond Density ◽  
Hydrogen Elimination ◽  
Photochemical Vapor Deposition ◽  
The Relationship ◽  
Hydrogenated Amorphous ◽  
Activation Type

ABSTRACTHydrogenated amorphous silicon (a-Si:H) films were prepared by mercury photosensitized decomposition of silane using a low-pressure mercury lamp. The deposition rate showed an activation type for substrate temperature (the activation energy: 0.13 eV), because the deposition rate would be determined by the rate of hydrogen elimination from the hydrogen saturated surface. Moreover, the relationship was found between the Si-H2 bond density in a- Si:H films and the gas phase reactions.

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