Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate

1986 ◽  
Vol 25 (Part 1, No. 8) ◽  
pp. 1148-1151 ◽  
Author(s):  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Takeshi Imura ◽  
Yukio Osaka ◽  
Minoru Kumeda ◽  
...  
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Structural Changes ◽  
Hydrogenated Amorphous Silicon ◽  
Proton Nuclear Magnetic Resonance ◽  
High Deposition Rate ◽  
Magnetic Resonance Studies ◽  
Hydrogenated Amorphous

Nuclear Magnetic Resonance Studies of Hydrogen in Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
R. E. Norberg ◽  
P. A. Fedders ◽  
D. J. Leopold
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Molecular Hydrogen ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Magnetic Resonance Studies ◽  
Structural Configurations ◽  
Species Specific ◽  
Hydrogenated Amorphous

AbstractProton and deuteron NMR in hydrogenated amorphous silicon yield quantitative measures of species-specific structural configurations and their dynamics. Populations of silicon-bonded and molecular hydrogens correlate with photovoltaic quality, doping, illumination/dark anneal sequences, and with infrared and other characterizations. High quality films contain substantial populations of nanovoid-trapped molecular hydrogen.

The Concentration of (SiH2)n Sites in Low and High Defect Density a-Si:H

2006 ◽  
Vol 910 ◽  
Author(s):  
David C. Bobela ◽  
T. Su ◽  
P. C. Taylor ◽  
A. Madan ◽  
G. Ganguly
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Proton Nuclear Magnetic Resonance ◽  
Dangling Bond ◽  
High Defect Density ◽  
Quality Material ◽  
Hydrogenated Amorphous

AbstractThe concentration of polysilane chains (SiH2)n, where n≥1, is estimated for higher quality hydrogenated amorphous silicon (a-Si:H) by pulsed proton nuclear magnetic resonance techniques (1H NMR). Our measurements indicate the minimum hydrogen content of approximately 10% of the total hydrogen is in the (SiH2)n configuration. Similar measurements in a high defect density sample (1017 silicon dangling bond defects cm-3) show that (SiH2)n sites account for ~ 15% of the total hydrogen. While the (SiH2)n infrared absorption (IR) modes are observed in the highly defective sample, no such modes are seen in the higher quality material. The results indicate that a significant amount of the total hydrogen content exists as (SiH2)n regardless of film quality.

Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

1984 ◽  
Vol 23 (Part 2, No. 2) ◽  
pp. L81-L82 ◽  
Author(s):  
Toshihiko Hamasaki ◽  
Masato Ueda ◽  
Akiyoshi Chayahara ◽  
Masataka Hirose ◽  
Yukio Osaka
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
High Deposition Rate ◽  
Hydrogenated Amorphous
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