Non-vacuum Thin-film CIGS Modules

2003 ◽  
Vol 763 ◽  
Author(s):  
Chris Eberspacher ◽  
Karen L. Pauls ◽  
John P. Serra
Keyword(s):  
Thin Film ◽  
Particle Packing ◽  
Transparent Conductors ◽  
Transparent Conductor ◽  
Organic Additives ◽  
Void Space ◽  
Planar Surfaces ◽  
Copper Indium ◽  
Coating Methods ◽  
Sheet Conductance

AbstractNon-vacuum techniques have been used to deposit coatings of copper indium gallium selenide (CIGS) and metal oxide transparent conductors useful for fabricating thin-film photovoltaic modules. Coatings are formed from nanoparticulate precursor materials using spraying, printing and spin-coating methods. Sprayed layers exhibit non-planar morphologies and low particle packing, and CIGS films made from sprayed precursor layers exhibit related non-planar morphologies and residual void space. The surface roughness of spray-derived CIGS films reduces the sheet conductance of overlying coatings; thin coatings of transparent conductors deposited on rough CIGS films exhibit sheet resistances up to two orders of magnitude higher than equivalent coatings on planar surfaces. Slurry additives can improve layer morphology and sintered film properties, but organic additives can leave carbon contamination of the sintered CIGS films. The fabrication of multi-cell modules imposes additional constraints on transparent conductor sheet conductance.

Comparative Study of Copper Indium Gallium Selenide (CIGS) Solar Cell With Other Solar Technologies

2021 ◽  
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Comparative Study ◽  
Crystalline Silicon ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...

Materials Optimization for thin-film copper indium gallium selenide (CIGS) solar cell based on distributed braggs reflector

Optik ◽  
2020 ◽  
pp. 165987
Author(s):  
Waqas Farooq ◽  
Thamraa Alshahrani ◽  
Syed Asfandyar Ali Kazmi ◽  
Javed Iqbal ◽  
Hassnain Abbas Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Studies on the graded band-gap copper indium di-selenide thin film solar cells prepared by electrochemical route

2019 ◽  
Vol 466 ◽  
pp. 358-366 ◽  
Author(s):  
Ashwini B. Rohom ◽  
Priyanka U. Londhe ◽  
Jeong In Han ◽  
Nandu B. Chaure
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
Copper Indium ◽  
Graded Band Gap ◽  
Selenide Thin Film

scholarly journals Photon and carrier management design for nonplanar thin-film copper indium gallium selenide photovoltaics

2017 ◽  
Vol 161 ◽  
pp. 149-156 ◽  
Author(s):  
Colton R. Bukowsky ◽  
Jonathan Grandidier ◽  
Katherine T. Fountaine ◽  
Dennis M. Callahan ◽  
Billy J. Stanbery ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium ◽  
Carrier Management

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

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