Stretchability of complex patterns of thin metal conductors on elastomeric skin

ABSTRACTWe have previously shown that 25nm thick gold stripes on 1mm thick silicone membrane retain electrical conduction when stretched up to 100% along their long dimension. To function as electrical interconnects in conformable integrated circuits, the metallization must be stretchable in arbitrary directions. Therefore we have made and tested the mechanical and electrical properties of complex conductor patterns including X and Y oriented lines and cross junctions. We find that the metal patterns continue to conduct under uniaxial stretching in the X or Y direction and under radial, biaxial stretching.

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Quantitative analysis of the mechanical and electrical properties of Cu-Cu bonds for three-dimensional integrated circuits (3D ICs)

10.32657/10356/13607 ◽

2007 ◽

Author(s):

Hoi Liong Leong

Keyword(s):

Quantitative Analysis ◽

Electrical Properties ◽

Integrated Circuits ◽

Three Dimensional ◽

Mechanical And Electrical Properties ◽

3D Ics

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Gapfill Study of Polyimides for MEMS Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.254.54 ◽

2011 ◽

Vol 254 ◽

pp. 54-57 ◽

Cited By ~ 1

Author(s):

Steven Lee Hou Jang ◽

Wee Ming Tan ◽

Ying Jun Mao ◽

Ramana Murthy ◽

Nagarajan Ranganathan

Keyword(s):

Electrical Properties ◽

Integrated Circuits ◽

Spin Coating ◽

Mechanical Systems ◽

Electrical Insulation ◽

Mechanical And Electrical Properties ◽

Wide Range ◽

Sacrificial Materials

Various types of polyimide have been used widely in the manufacturing of integrated circuits and MEMS’ (Micro Electrical Mechanical Systems) such as sensors. These organic spin-on polymers exhibit a wide range of mechanical and electrical properties and have been commonly used for electrical insulation as well as device passivation and protection. In addition, these organic spin-on polymers serve as excellent sacrificial materials for forming cavities on MEMS structures. This work studies the gapfill properties of several polyimides after spin-coating and curing. In addition, this work examines and compares the gapfilling and planarization properties of a number of different polyimides, including multiple layers of polyimides for gapfilling and planarization.

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Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100167184 ◽

1996 ◽

Vol 54 ◽

pp. 944-945

Author(s):

Richard G. Sartore

Keyword(s):

Integrated Circuits ◽

Plasma Etching ◽

Microwave Integrated Circuits ◽

Monolithic Microwave Integrated Circuits ◽

Thick Gold ◽

Gaas Devices ◽

Source Distance ◽

Margin Of Error ◽

Dimensional Measurements ◽

Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

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