Use of High-Temperature Superconductors in High Speed Electronic Switches with Current Gain

1987 ◽  
Vol 99 ◽  
Author(s):  
Bryan A. Biegel ◽  
R. Singh
Keyword(s):  
High Temperature ◽  
Josephson Junction ◽  
Resonant Tunneling ◽  
High Speed ◽  
High Temperature Superconductors ◽  
Semiconductor Devices ◽  
Proximity Effects ◽  
Current Gain ◽  
Recent Developments ◽  
Electronic Switches

ABSTRACTRecent developments in superconductivity have taken 77 K superconducting electronics from a dream to a likelihood. Rather than following the conventional path by developing Josephson junction-based devices, this paper discusses the unique possibilities of hybrid superconductor/semiconductor devices. The two devices discussed are a true three-terminal hybrid resonant tunneling transistor and the semiconductor-coupled Josephson junction. Also, a list is given of as yet uninvestigated issues concerning the new superconductors and their proximity effects with semiconductors -issues that are critical to the operation of these hybrid superconductor/semiconductor devices.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Spin Injection Into YBa2Cu3Ox Films

2003 ◽  
Vol 17 (10n12) ◽  
pp. 491-504
Author(s):  
P. Mikheenko ◽  
M. D. Allsworth ◽  
R. Chakalov ◽  
M. S. Colclough ◽  
C. M. Muirhead
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Spin Injection ◽  
High Temperature Superconductors ◽  
Surface Current ◽  
Current Gain ◽  
Measurable Effect ◽  
Colossal Magnetoresistive ◽  
Spin Polarized ◽  
20 Nm

We report a range of experiments designed to test the efficacy of spin polarized injection from colossal magnetoresistive material (CMR) into high temperature superconductors (HTS). These include traditional transport measurements, studies of CMR/YBCO contacts, measurements of penetration depth and studies of the effect of spin-injection on the critical state of square thin films and rings. We have used pulsed currents to minimize heating and have made comparisons with the non-magnetic homologue of CMR LaNiO3. Our experiments provide evidence that there is a measurable effect, but that it is small and mainly confined to 10–20 nm of the YBCO surface. Current gain of about 0.2 has been observed.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

FUNDAMENTALS, PERFORMANCE AND RELIABILITY OF III-V COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTORS

1995 ◽  
Vol 06 (01) ◽  
pp. 1-89 ◽  
Author(s):  
GUANG-BO GAO ◽  
S. NOOR MOHAMMAND ◽  
GREGORY A. MARTIN ◽  
HADIS MORKOÇ
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Compound Semiconductor ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Processing Technologies ◽  
Recent Developments ◽  
Improved Performance ◽  
Oscillation Frequencies ◽  
Recorded Performances

Recent developments in the physics and technology of III-V compound heterojunction bipolar transistors (HBTs) are reviewed. The technologies discussed are AlGaAs/GaAs, GaInP/GaAs, InP/InGaAs, and AlInAs/InGaAs based heterostructures. WIth current gain cut off frequencies over 100 GHz and maximum oscillation frequencies of about 200 GHz, the III-V compound semiconductor based HBTs have advanced to the point of commercialization. These developments also had the fortuitous effect of providing impetus and theoretical base to advance Si based HBT technologies, such as SiGe HBTs, to advance also. Recent SiGe HBTs, taking advantage of advanced Si processing technologies, have also recorded performances in excess of 100 GHz with applications envisioned in high speed analog-digital converters. While there remain some voids in the fundamental understanding of HBTs, the state-of-the-art of the GaAs HBT technology, concerning reproducibility and reliability, is at a point where problems related to production are at the forefront. The next few years are going to prove interesting with each technology recording improved performance.

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