scholarly journals Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

1999 ◽  
Vol 4 (S1) ◽  
pp. 333-338
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Growth Conditions ◽  
Structural Quality ◽  
Luminescence Spectra ◽  
Near Band Edge ◽  
Flat Surfaces

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Growth Conditions ◽  
Structural Quality ◽  
Luminescence Spectra ◽  
Near Band Edge ◽  
Flat Surfaces

AbstractThe growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103526 ◽  
Author(s):  
J. Miguel-Sánchez ◽  
A. Guzmán ◽  
U. Jahn ◽  
A. Trampert ◽  
J. M. Ulloa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Nitrogen Species

Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 2 ◽  
Author(s):  
M. A. Sánchez-García ◽  
E. Calleja ◽  
E. Monroy ◽  
F. J. Sánchez ◽  
F. Calle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Structural Quality ◽  
Half Maximum ◽  
High Quality ◽  
Force Microscopy ◽  
Aln Buffer ◽  
Xrd Techniques

High quality AlN layers with full widths at half maximum values of 10 arcmin and average surface roughness (rms) of 48Å were grown by molecular beam epitaxy on Si(111) substrates. A systematic study and optimization of the growth conditions was performed in order to use these AlN layers as buffers in the growth of GaN films. Atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. Best AlN films were obtained at high substrate temperatures (Tsubs>900°C) and III/V ratios close to stoichiometry. Growth conditions with III/V ratios beyond stoichiometry (Al-rich) did not further improve the crystal quality. In these cases a higher substrate temperature is needed to prevent condensation of Al on the surface. GaN films with full width at half maximum of 10 arcmin and improved optical properties were grown on top of optimized AlN buffer layers.

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

2005 ◽  
Vol 281 (2-4) ◽  
pp. 249-254 ◽  
Author(s):  
E.-M. Pavelescu ◽  
T. Hakkarainen ◽  
V.D.S. Dhaka ◽  
N.V. Tkachenko ◽  
T. Jouhti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam

Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 9 (3-4) ◽  
pp. 741-744 ◽  
Author(s):  
Shigehiko Hasegawa ◽  
Sachio Komori ◽  
Kotaro Higashi ◽  
Daijiro Abe ◽  
Yi-Kai Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Growth Conditions

scholarly journals Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 90 (4) ◽  
pp. 785-788 ◽  
Author(s):  
M. Godlewski ◽  
J.P. Bergman ◽  
B. Monemar ◽  
E. Kurtz ◽  
D. Hommel
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Conditions

Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 96 (2) ◽  
pp. 1104-1110 ◽  
Author(s):  
N. Gogneau ◽  
D. Jalabert ◽  
E. Monroy ◽  
E. Sarigiannidou ◽  
J. L. Rouvière ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam
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