Influence Of Fabrication Condition on the Microstructural and Optical Properties of Lead-Free Ferroelectric Bi\(_{0.5}\)Na\(_{0.5}\)TiO\(_{3}\) Materials

Lead-free ferroelectric materials have attracted considerable attention due to the increasing potential application in environmental benign materials. Among lead-free ferroelectric materials, the Bi0.5Na0.5TiO3 (BNT) materials were more studied because it exhibited the good ferroelectric and piezoelectric properties which could be promising candidate materials replacing Pb(Zr,Ti)O3. In this work, the lead-free ferroelectric BNT materials were synthesized by sol-gel method. The effects of fabrication process to microstructural and optical properties were studied which includes Na precursor concentration and calcining temperature. The result indicated that the Na precursor concentration were higher 40 mol.% and the calcining temperatures

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Ferroelectric and piezoelectric properties of lead-free (K,Na,Li)(Nb,Ta,Sb)O3 ceramics fabricated by using a citric-acid-assisted modified sol-gel method

Journal of the Korean Physical Society ◽

10.3938/jkps.61.966 ◽

2012 ◽

Vol 61 (6) ◽

pp. 966-970 ◽

Cited By ~ 1

Author(s):

Ju Sung Kim ◽

Jong Pil Kim ◽

Chang Won Ahn ◽

Ill Won Kim ◽

Byung Moon Jin

Keyword(s):

Citric Acid ◽

Piezoelectric Properties ◽

Sol Gel ◽

Lead Free ◽

Gel Method ◽

Sol Gel Method ◽

Ferroelectric And Piezoelectric Properties

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INFLUENCE OF SINTERING TEMPERATURE ON PHASE FORMATION AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC BI0.5NA0.5TIO3 MATERIALS

Vietnam Journal of Science and Technology ◽

10.15625/2525-2518/54/1a/11814 ◽

2018 ◽

Vol 54 (1A) ◽

pp. 104

Author(s):

Le Thi Hai Thanh

Keyword(s):

Optical Properties ◽

Phase Formation ◽

Single Phase ◽

Sintering Temperature ◽

Electronic Devices ◽

Sol Gel ◽

Ferroelectric Materials ◽

Lead Free ◽

Sintering Time ◽

Piezoelectric Characteristics

Pb(Zr,Ti)O3 based ferroelectric materials have been widely used in electronic devices even though they were banned due to the toxicity of lead on health and environment. Among the lead-free ferromagnetic materials, Bi0.5Na0.5TiO3 has received much attention because their ferroelectric and piezoelectric characteristics are comparable to Pb(Zr,Ti)O3. In this report, Bi0.5Na0.5TiO3 was fabricated by sol-gel method. The influence of fabricating conditions such as gelization, sintering temperature on crystallinity was studied. The result showed that Bi0.5Na0.5TiO3 was in single phase when compenstation amount of Na in gelization is 40 mol%; sintering temperature higher than 800 oC and sintering time is 2 h. The bandgap of Bi0.5Na0.5TiO3 which estimated from absorption spectroscopy is in the range of 3.01 - 3.18 eV.

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Study on Dielectric and Ferroelectric Properties of Gd-Doped Sr2Bi4Ti5O18 Ceramics

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.328-330.1131 ◽

2011 ◽

Vol 328-330 ◽

pp. 1131-1134

Author(s):

Qian Chen ◽

Zhi Jun Xu ◽

Rui Qing Chu ◽

Yong Liu ◽

Ming Li Chen ◽

...

Keyword(s):

Piezoelectric Properties ◽

Ferroelectric Properties ◽

Solid State Reaction Method ◽

Lead Free ◽

Structural Ceramics ◽

Conventional Solid State Reaction ◽

Reaction Method ◽

Maximum Value ◽

Pure Bismuth ◽

Ferroelectric And Piezoelectric Properties

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

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Transferred PMN-PT Thick Film on Conductive Silver Epoxy

Materials ◽

10.3390/ma11091621 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1621 ◽

Cited By ~ 1

Author(s):

Tao Zhang ◽

Jun Ou-Yang ◽

Xiaofei Yang ◽

Benpeng Zhu

Keyword(s):

Thick Film ◽

Silicon Substrate ◽

Chemical Method ◽

Piezoelectric Properties ◽

Sol Gel ◽

Wet Chemical Method ◽

Chemical Route ◽

Wet Chemical ◽

Silver Epoxy ◽

Ferroelectric And Piezoelectric Properties

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.

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