Determination of creep mechanisms in various silicon carbides via TEM

1986 ◽  
Vol 44 ◽  
pp. 484-487
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis
Keyword(s):  
Heat Exchangers ◽  
Sintered Material ◽  
Polycrystalline Material ◽  
Chemical Vapor ◽  
Graphite Substrate ◽  
Second Phase ◽  
Reaction Bonding ◽  
Creep Mechanisms ◽  
Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

Borehole Heat Exchangers in aquifers: simulation of the grout material impact

2016 ◽  
Vol 41 ◽  
pp. 268-271
Author(s):  
Luca Alberti ◽  
Adriana Angelotti ◽  
Matteo Antelmi ◽  
Ivana La Licata
Keyword(s):  
Heat Exchangers ◽  
Borehole Heat Exchangers

Dramatic efficiency gains through improved heat exchangers: the case of cassava flash drying in Nigeria

Food Chain ◽  
2015 ◽  
Vol 5 (1-2) ◽  
pp. 91-104 ◽  
Author(s):  
Andrew Marchant ◽  
Andrew Graffham ◽  
Lateef Sanni ◽  
Idowu Adeoya
Keyword(s):  
Heat Exchangers ◽  
Efficiency Gains ◽  
Flash Drying
Sign in / Sign up

Export Citation Format

Share Document