Metal surface treatment in a low-frequency exposure field

2019 ◽  
pp. 73-77
Author(s):  
G. N. Fadeev ◽  
◽  
V. S. Boldyrev ◽  
N. A. Bogatov ◽  
Yu. M. Averina ◽  
...  
Author(s):  
Yeong-Kwan Jo ◽  
Yeong-Wook Gil ◽  
Do-Sik Shim ◽  
Young-Sik Pyun ◽  
Sang-Hu Park

AbstractWe propose an effective method to control the local hardness and morphology of a metal surface by tilting the incident angle of a horn during ultrasonic nanocrystal surface modification (UNSM). In this study, surface treatment using UNSM was performed on an S45C specimen and a parameter study was conducted for optimization. The process parameters were the feeding rate, static load, striking force, and processing angle (Ф). In particular, the Ф was analyzed by tilting the horn by 0°, 10°, 20°, 30°, 40°, and 45° to understand its effect on surface hardness and changes in the morphology. From fundamental experiments, some important phenomena were observed, such as grain-microstructure changes along the processing and thickness directions. Furthermore, to verify the practical usefulness of this study, a flat and a hemispherical specimen of S45C material were treated using UNSM with various values of Ф. A significant change in hardness (an increase from 2–45%) and a gradual hardness gradient on the tested specimens could be easily realized by the proposed method. Therefore, we believe that the method is effective for controlling the mechanical hardness of a metal surface.


2004 ◽  
Vol 121 (17) ◽  
pp. 8580 ◽  
Author(s):  
J. L. Vega ◽  
R. Guantes ◽  
S. Miret-Artés ◽  
D. A. Micha

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002326-002360
Author(s):  
Erkan Cakmak ◽  
Bioh Kim ◽  
Viorel Dragoi

The process of wafer-level bonding is being successfully used to form MEMS devices. Wafer level bonding may be realized by different methods such as thermo compression, transient liquid phase, anodic, glass frit, or polymer bonding. These methods have different requirements and the choice of wafer level bonding method is defined by the application type. Metal TCB has a wide variety of applications with materials of choice including Au, Cu and Al. 3D electrical connections are created by the use of Cu-Cu TCB; while CMOS MEMS devices may be realized by Al-Al TCB. In this study the wafer level bonding process of Cu-Cu and Al-Al TCB are characterized. The effects and significance of various bonding process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Analysis methods include SAM, SEM, AFM, and four point bending test. Al-Al TCB samples were investigated on the interfacial adhesion energy and bond quality. IAE and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8–10 J/m2. A positive relation between IAE and bonding temperature was observed for Cu-Cu TCB. IAE's of greater then 10 J/m2 were obtained on bonded samples that do not show a post bond residual seam on the bonding interface. An acid based pre treatment was shown to impact the surface properties of the initial metal surface hence affecting the IAE. Post bond annealing processes showed the most significant impact on the IAE of the Cu-Cu TCB system. To obtain comparable IAE values the Al-Al TCB method requires a higher bonding temperature. However the Cu-Cu TCB is sensitive to the initial metal surface condition and requires surface treatment processes prior to bonding to obtain high quality bonding results.


Polymer Korea ◽  
2017 ◽  
Vol 41 (4) ◽  
pp. 727-734
Author(s):  
Se Lyn Kim ◽  
Min-Young Lyu ◽  
Sung Woong Jang

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