Non-Contact Guideway for Substrate Transportation by Ultrasonic Oscillation

2008 ◽  
Vol 2 (3) ◽  
pp. 199-204
Author(s):  
Hiromi Isobe ◽  
◽  
Akira Kyusojin ◽  
Keyword(s):  
Standing Wave ◽  
Relative Position ◽  
Silicon Substrate ◽  
Traveling Wave ◽  
Polycrystalline Silicon ◽  
Transportation System ◽  
Experimental Results ◽  
Rectangular Plates ◽  
Ultrasonic Oscillation ◽  
Oscillating Plate

In recent years, the enlargement of plane substrates and semiconductor wafers has advanced. To carry the longer and wider substrate with conventional thickness requires more fragility. The development of non-contact transportation system is desired to prevent the fracture of the substrate. In this study, a new non-contact transportation system to provide damage-free transportation is proposed. The substrate is supported by aerostatic force and transported by acoustic viscous streaming, which is induced by traveling wave deformation of disk-type stators. The desktop size non-contact transportation apparatus for polycrystalline silicon substrate (150(W)×150(L)×0.3(t)) is constructed to clarify the basic carrying performance. In order to realize non-contact transportation, a unique guide technique is proposed. The standing wave deformations of rectangular plates guide the substrate without contacting to avoid dropping off from the carrier way. Experimental results demonstrate that holding force varies with relative position between oscillating plate and substrate. The maximum holding force is obtained when the center of oscillating plate is on the edge of substrate.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

1977 ◽  
Vol 48 (5) ◽  
pp. 1815-1821 ◽  
Author(s):  
Katsuhiro Tsukamoto ◽  
Youichi Akasaka ◽  
Kazuo Horie
Keyword(s):  
Silicon Substrate ◽  
Polycrystalline Silicon ◽  
And Diffusion

Large deflection of plates and beams obeying non-linear stress—strain laws

1974 ◽  
Vol 9 (3) ◽  
pp. 178-184 ◽  
Author(s):  
K R Rushton ◽  
P M Hook
Keyword(s):  
Finite Difference ◽  
Large Deflection ◽  
Experimental Results ◽  
Large Deflections ◽  
Rectangular Plates ◽  
Dynamic Relaxation ◽  
Stress Strain ◽  
Finite Difference Technique ◽  
Non Linear ◽  
Alternative Solutions

The large deflections of rectangular plates and beams obeying a non-linear stress-strain law are examined. Solutions are obtained by use of dynamic relaxation, a numerical finite-difference technique. Comparisons are made with alternative solutions and experimental results. The effects of varying parameters in the non-linear expressions are considered.

A Low-Cost Head Supported Eye Tracker with High Precision

2013 ◽  
Vol 772 ◽  
pp. 455-460
Author(s):  
Jie Chun Chen ◽  
Shi Quan Ma ◽  
Li Ping Zhao
Keyword(s):  
High Precision ◽  
Relative Position ◽  
Low Cost ◽  
Experimental Results ◽  
Average Error ◽  
Eye Tracker ◽  
Experimental Apparatus ◽  
The Subject ◽  
Maximal Average

This paper discusses a low cost head-supported eye tracker. To measure the coordinates associated with a subjects gaze point fallen on a monitor, the subject places his head on a head support and keeps his head fixed. Meanwhile, a camera is used to capture images of the subjects left or right eye. The subjects gaze point fallen on a monitor can be determined according to the relative position of the pupil and glint in an eye image. This paper presents not only the principle of this eye tracker, but also the methods used to detect the pupil and glint in an eye image. At last, this paper presents some experimental results, and the experimental results show that the maximal average error of the experimental apparatus is 15 pixels or 0.4 in degrees.

Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Özttirk ◽  
Edmund G. Seebauer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Titanium Silicide ◽  
Experimental Results ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Dose Levels

ABSTRACTThis work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

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