scholarly journals The Effect of annealing temperature on the optical properties of (Cu2S)100-x( SnS2 )x thin films

2014 ◽  
Vol 11 (2) ◽  
pp. 641-651
Author(s):  
Baghdad Science Journal

Thin films of (Cu2S)100-x( SnS2 )x at X=[ 30,40, &50)]% with thickness (0.9±0.03)µm , had been prepared by chemical spray pyrolysis method on glass substrates at 573 K. These films were then annealed under low pressure of(10-2) mbar ,373)423&473)K for one hour . This research includes , studying the the optical properties of (Cu2S)100-x-(SnS2)x at X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 - 1100) nm in order to study the optical properties . It was found that these films had direct optical band gap which decreases with the increasing SnS2 ratio , while it increasing with the increase in the annealing temperature at all ratio

Author(s):  
Khalid Haneen Abass

Fe2O3 thin films that doped by NiO were obtained on glass substrates by the chemical spray pyrolysis technique, and annealed at 450 °C and 500 °C. The effect of annealing on optical properties was studied by recording the absorbance spectra using UV-Visible spectrophotometer. The refractive index decreases with increasing annealing temperature, such as an optical band gap that decreases from 2.68 eV before annealing to 2.58 eV after annealing of 500 °C. Absorption coefficient and extinction coefficient increase with increasing annealing temperature.


2019 ◽  
Vol 14 (29) ◽  
pp. 182-190
Author(s):  
Nadia Jasim Ghdeeb

CdS and CdS:Sn thin films were successfully deposited on glasssubstrates by spray pyrolysis method. The films were grown atsubstrate temperatures 300 C°. The effects of Sn concentration on thestructural and optical properties were studied.The XRD profiles showed that the films are polycrystalline withhexagonal structure grown preferentially along the (002) axis. Theoptical studies exhibit direct allowed transition. Energy band gapvary from 3.2 to 2.7 eV.


2019 ◽  
Vol 60 ◽  
pp. 63-75 ◽  
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.


Author(s):  
Sami Salmann Chiad

By chemical spray pyrolysis method. The CdO thin film prepared at constant film thickness (350 nm). The prepared films are annealed at a temperature of 450 and 500 °C. The optical properties are calculated from the measurement of UV-Visible spectrophotometer spectrum in the range of (300-900) nm at room temperature. The transmittance, absorption coefficient, extinction coefficient, refractive index, and skin depth are calculated as annealing temperature. The energy gap decreased from 2.52 eV to 2.47 eV when the annealing temperature increased from room temperature to 500 °C.


2021 ◽  
Vol 1021 ◽  
pp. 107-114
Author(s):  
Buthainah A. Ibrahim ◽  
Ziad T. Khodiar ◽  
Marwan M. Farhan

Cobalt oxide thin film (Co3O4) has been prepared from cobalt chloride with distilled water on conducting glass substrates Fluorine doped Tin Oxide (FTO) at (400ºC) by depositing chemical spray pyrolysis, with thickness (200 nm). The structural properties are studied by XRD. Also, optical properties and electrical properties of Co3O4 thin film are studied by UV spectroscopy and Cyclic voltammetry (CV) respectively. The effects of gamma irradiation on optical properties are also examined. XRD results showed that the film was polycrystalline with cubic structure having preferred orientation (111). The as-prepared Co3O4 film exhibits a noticeable EC behaviour with reversible colour which changes from dark grey to pale yellow with bleaching time (55 s) and colouring time (40 s). After irradiation, the optical properties showed that as the transmittance decrease leads to decrease the direct optical band gap from (3.68eV) to (3.55eV)


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