scholarly journals High-Sensitivity Total Reflection X-Ray Fluorescence Spectroscopy of Silicon Wafers Using Synchrotron Radiation.

1995 ◽  
Vol 11 (3) ◽  
pp. 515-518 ◽  
Author(s):  
Stephen S. LADERMAN ◽  
Alice Fischer-COLBRIE ◽  
Ayako SHIMAZAKI ◽  
Kunihiro MIYAZAKI ◽  
Sean BRENNAN ◽  
...  
1993 ◽  
Vol 37 ◽  
pp. 599-605 ◽  
Author(s):  
T. Utaka ◽  
T. Shoji ◽  
K. Shimizu ◽  
T. Arai ◽  
R. Wilson

Total reflection X-ray Fluorescence (TXRF) has been applied to the detection and quantification of metal contamination on the surface and near-surface regions of silicon wafers in the semiconductor industry The need for improving the sensitivity and detection limit of the TXRF technique is driven by the progress in producing thinner films and finer features in the development of larger Mbit DRAMS.


1993 ◽  
Vol 37 ◽  
pp. 565-575 ◽  
Author(s):  
R. S. Hockett

This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for semiconductors. This review is limited to surface analysis of contamination for semiconductors and does not include chemical analysis in semiconductor processing. TXRF for surface analysis is a relatively new technology. One of the first publications occurred in 1986 using synchrotron radiation. Publications using commercially available TXRF instruments for semiconductor applications began in 1988. Today there are on the order of 100 TXRF instruments worldwide in the semiconductor industry. Since 1988 there have been about 100 publications in this field, but this number does not include numerous abstracts and publications in Japan where the majority of the commercial instruments are found today. The commercial instruments were developed for the primary application of characterizing the cleaning of planar silicon wafers, however, numerous unforeseen applications were developed by users and many of those applications are reported here. In essence TXRF has much broader application today in the semiconductor industry than supporting the cleaning of silicon wafers.


1995 ◽  
Vol 66 (2) ◽  
pp. 1293-1297 ◽  
Author(s):  
P. Pianetta ◽  
N. Takaura ◽  
S. Brennan ◽  
W. Tompkins ◽  
S. S. Laderman ◽  
...  

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